Abstract
A tunnel-junction injection of sub-band-gap hot holes into the valence band of a semiconducator heterosture for generating band-gap luminescence was demonstrated. The wafer was processed by standard shadow-mask and photolithographic techniques. It was observed that the two surface plots shared the same V emitter and V collector which indicated that the luminescence was a result of the injected hot hole current. The result shows that this device enables design of light-emitting devices and develops BEEL-type scanning microscopy.
Original language | English |
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Pages (from-to) | 2265-2267 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 85 |
Issue number | 12 |
DOIs | |
State | Published - 20 Sep 2004 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)