Ballistic hole emission luminescence

Ian Appelbaum, K. J. Russell, I. Shalish, V. Narayanamurti, M. P. Hanson, A. C. Gossard

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


A tunnel-junction injection of sub-band-gap hot holes into the valence band of a semiconducator heterosture for generating band-gap luminescence was demonstrated. The wafer was processed by standard shadow-mask and photolithographic techniques. It was observed that the two surface plots shared the same V emitter and V collector which indicated that the luminescence was a result of the injected hot hole current. The result shows that this device enables design of light-emitting devices and develops BEEL-type scanning microscopy.

Original languageEnglish
Pages (from-to)2265-2267
Number of pages3
JournalApplied Physics Letters
Issue number12
StatePublished - 20 Sep 2004
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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