A tunnel-junction injection of sub-band-gap hot holes into the valence band of a semiconducator heterosture for generating band-gap luminescence was demonstrated. The wafer was processed by standard shadow-mask and photolithographic techniques. It was observed that the two surface plots shared the same V emitter and V collector which indicated that the luminescence was a result of the injected hot hole current. The result shows that this device enables design of light-emitting devices and develops BEEL-type scanning microscopy.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)