Band gap narrowing and radiative efficiency of silicon doped GaN

H. P.D. Schenk; S. I. Borenstain; A. Berezin; A. Schön; E. Cheifetz; S. Khatsevich; D. H. Rich

doi:10.1063/1.2919775

Band gap narrowing and radiative efficiency of silicon doped GaN

H. P.D. Schenk, S. I. Borenstain, A. Berezin, A. Schön, E. Cheifetz, S. Khatsevich, D. H. Rich

Department of Physics

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28 Scopus citations

Abstract

Radiative efficiency, band gap narrowing, and band filling are studied in Si-doped GaN films as a function of carrier concentration (n), using room and low temperature cathodoluminescence (CL). Using the Kane model, a band gap narrowing Δ E_g of - (3.6±0.6) × 10^-8 and - (2.6±0.6) × 10^-8 n^1/3 eV n ^1/3 is obtained for epitaxially strained and relaxed material, respectively. Band-edge CL time response and absolute external photon yield are measured. The internal radiation efficiency is deduced. Its monotonic increase as n increases is explained by the increase in the spontaneous radiative rate with a radiative free carrier band-to-band recombination coefficient B= (1.2±0.3) × 10^-11 cm³ s^-1.

Original language	English
Article number	103502
Journal	Journal of Applied Physics
Volume	103
Issue number	10
DOIs	https://doi.org/10.1063/1.2919775
State	Published - 9 Jun 2008

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.2919775

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title = "Band gap narrowing and radiative efficiency of silicon doped GaN",

abstract = "Radiative efficiency, band gap narrowing, and band filling are studied in Si-doped GaN films as a function of carrier concentration (n), using room and low temperature cathodoluminescence (CL). Using the Kane model, a band gap narrowing Δ Eg of - (3.6±0.6) × 10-8 and - (2.6±0.6) × 10-8 n1/3 eV n 1/3 is obtained for epitaxially strained and relaxed material, respectively. Band-edge CL time response and absolute external photon yield are measured. The internal radiation efficiency is deduced. Its monotonic increase as n increases is explained by the increase in the spontaneous radiative rate with a radiative free carrier band-to-band recombination coefficient B= (1.2±0.3) × 10-11 cm3 s-1.",

author = "Schenk, {H. P.D.} and Borenstain, {S. I.} and A. Berezin and A. Sch{\"o}n and E. Cheifetz and S. Khatsevich and Rich, {D. H.}",

note = "Funding Information: The authors wish to thank B. Beaumont and J.-P. Faurie of Lumilog, as well as P. Prystawko, R. Czernetzki, and M. Leszczy{\'n}ski of Unipress/TopGaN for supplying epitaxial layers. Support through the Marie Curie Industry Host Fellowship Grant No. IST-2001-82952 is gratefully acknowledged. One of the authors (S.I.B.) would like to thank J. Salzman for valuable discussions. We used Casino V2.42 for Monte Carlo simulation of electron trajectories in solids.",

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doi = "10.1063/1.2919775",

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T1 - Band gap narrowing and radiative efficiency of silicon doped GaN

AU - Schenk, H. P.D.

AU - Borenstain, S. I.

AU - Berezin, A.

AU - Schön, A.

AU - Cheifetz, E.

AU - Khatsevich, S.

AU - Rich, D. H.

N1 - Funding Information: The authors wish to thank B. Beaumont and J.-P. Faurie of Lumilog, as well as P. Prystawko, R. Czernetzki, and M. Leszczyński of Unipress/TopGaN for supplying epitaxial layers. Support through the Marie Curie Industry Host Fellowship Grant No. IST-2001-82952 is gratefully acknowledged. One of the authors (S.I.B.) would like to thank J. Salzman for valuable discussions. We used Casino V2.42 for Monte Carlo simulation of electron trajectories in solids.

PY - 2008/6/9

Y1 - 2008/6/9

N2 - Radiative efficiency, band gap narrowing, and band filling are studied in Si-doped GaN films as a function of carrier concentration (n), using room and low temperature cathodoluminescence (CL). Using the Kane model, a band gap narrowing Δ Eg of - (3.6±0.6) × 10-8 and - (2.6±0.6) × 10-8 n1/3 eV n 1/3 is obtained for epitaxially strained and relaxed material, respectively. Band-edge CL time response and absolute external photon yield are measured. The internal radiation efficiency is deduced. Its monotonic increase as n increases is explained by the increase in the spontaneous radiative rate with a radiative free carrier band-to-band recombination coefficient B= (1.2±0.3) × 10-11 cm3 s-1.

AB - Radiative efficiency, band gap narrowing, and band filling are studied in Si-doped GaN films as a function of carrier concentration (n), using room and low temperature cathodoluminescence (CL). Using the Kane model, a band gap narrowing Δ Eg of - (3.6±0.6) × 10-8 and - (2.6±0.6) × 10-8 n1/3 eV n 1/3 is obtained for epitaxially strained and relaxed material, respectively. Band-edge CL time response and absolute external photon yield are measured. The internal radiation efficiency is deduced. Its monotonic increase as n increases is explained by the increase in the spontaneous radiative rate with a radiative free carrier band-to-band recombination coefficient B= (1.2±0.3) × 10-11 cm3 s-1.

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VL - 103

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Band gap narrowing and radiative efficiency of silicon doped GaN

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