Band gap narrowing and radiative efficiency of silicon doped GaN

H. P.D. Schenk, S. I. Borenstain, A. Berezin, A. Schön, E. Cheifetz, S. Khatsevich, D. H. Rich

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

Radiative efficiency, band gap narrowing, and band filling are studied in Si-doped GaN films as a function of carrier concentration (n), using room and low temperature cathodoluminescence (CL). Using the Kane model, a band gap narrowing Δ Eg of - (3.6±0.6) × 10-8 and - (2.6±0.6) × 10-8 n1/3 eV n 1/3 is obtained for epitaxially strained and relaxed material, respectively. Band-edge CL time response and absolute external photon yield are measured. The internal radiation efficiency is deduced. Its monotonic increase as n increases is explained by the increase in the spontaneous radiative rate with a radiative free carrier band-to-band recombination coefficient B= (1.2±0.3) × 10-11 cm3 s-1.

Original languageEnglish
Article number103502
JournalJournal of Applied Physics
Volume103
Issue number10
DOIs
StatePublished - 9 Jun 2008

ASJC Scopus subject areas

  • General Physics and Astronomy

Fingerprint

Dive into the research topics of 'Band gap narrowing and radiative efficiency of silicon doped GaN'. Together they form a unique fingerprint.

Cite this