Abstract
A review of transistor characteristics in the avalanche mode, in common emitter configuration, is presented. The transistor characteristics in common emitter configuration are divided into eight regions which are discussed, particularly those regions which are connected with the avalanche phenomena. This is made by the summary of the physical phenomena, and of the basic mathematical relations of transistor characteristics in the avalanche region.
| Original language | English |
|---|---|
| Pages (from-to) | 21-29 |
| Number of pages | 9 |
| Journal | Microelectronics Journal |
| Volume | 6 |
| Issue number | 4 |
| State | Published - 1 Jan 1975 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering