Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices

Shankar Swaminathan; Michael Shandalov; Yasuhiro Oshima; Paul C. McIntyre

doi:10.1063/1.3313946

Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices

Shankar Swaminathan, Michael Shandalov, Yasuhiro Oshima, Paul C. McIntyre

Research output: Contribution to journal › Article › peer-review

69 Scopus citations

Abstract

We investigate the electrical properties of germanium-channel metal-oxide-semiconductor capacitors with an amorphous atomic-layer-deposited (ALD)-Al₂O₃ interlayer (IL) and higher- k ALD-TiO ₂ gate dielectric. An ALD-Al₂O₃ IL of ∼1 nm thickness reduces the gate leakage current density at the otherwise low band-offset TiO₂ /Ge interface by six orders of magnitude at flatband. Devices with the thinnest Al₂O₃ IL exhibited a low capacitance equivalent thickness of 1.2 nm. The hysteresis of the capacitance-voltage curves was <10 mV for TiO₂/Al ₂O₃/Ge capacitors with different Al₂O ₃ thicknesses. We obtained a relatively low minimum density of interface states, Dit ∼3× 10¹¹ cm^-2 eV ^-1, suggesting the potential of Al₂O₃ ILs for higher- k/Ge interface passivation.

Original language	English
Article number	082904
Journal	Applied Physics Letters
Volume	96
Issue number	8
DOIs	https://doi.org/10.1063/1.3313946
State	Published - 12 Mar 2010
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices",

abstract = "We investigate the electrical properties of germanium-channel metal-oxide-semiconductor capacitors with an amorphous atomic-layer-deposited (ALD)-Al2O3 interlayer (IL) and higher- k ALD-TiO 2 gate dielectric. An ALD-Al2O3 IL of ∼1 nm thickness reduces the gate leakage current density at the otherwise low band-offset TiO2 /Ge interface by six orders of magnitude at flatband. Devices with the thinnest Al2O3 IL exhibited a low capacitance equivalent thickness of 1.2 nm. The hysteresis of the capacitance-voltage curves was <10 mV for TiO2/Al 2O3/Ge capacitors with different Al2O 3 thicknesses. We obtained a relatively low minimum density of interface states, Dit ∼3× 1011 cm-2 eV -1, suggesting the potential of Al2O3 ILs for higher- k/Ge interface passivation.",

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AU - Swaminathan, Shankar

AU - Shandalov, Michael

AU - Oshima, Yasuhiro

AU - McIntyre, Paul C.

PY - 2010/3/12

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N2 - We investigate the electrical properties of germanium-channel metal-oxide-semiconductor capacitors with an amorphous atomic-layer-deposited (ALD)-Al2O3 interlayer (IL) and higher- k ALD-TiO 2 gate dielectric. An ALD-Al2O3 IL of ∼1 nm thickness reduces the gate leakage current density at the otherwise low band-offset TiO2 /Ge interface by six orders of magnitude at flatband. Devices with the thinnest Al2O3 IL exhibited a low capacitance equivalent thickness of 1.2 nm. The hysteresis of the capacitance-voltage curves was <10 mV for TiO2/Al 2O3/Ge capacitors with different Al2O 3 thicknesses. We obtained a relatively low minimum density of interface states, Dit ∼3× 1011 cm-2 eV -1, suggesting the potential of Al2O3 ILs for higher- k/Ge interface passivation.

AB - We investigate the electrical properties of germanium-channel metal-oxide-semiconductor capacitors with an amorphous atomic-layer-deposited (ALD)-Al2O3 interlayer (IL) and higher- k ALD-TiO 2 gate dielectric. An ALD-Al2O3 IL of ∼1 nm thickness reduces the gate leakage current density at the otherwise low band-offset TiO2 /Ge interface by six orders of magnitude at flatband. Devices with the thinnest Al2O3 IL exhibited a low capacitance equivalent thickness of 1.2 nm. The hysteresis of the capacitance-voltage curves was <10 mV for TiO2/Al 2O3/Ge capacitors with different Al2O 3 thicknesses. We obtained a relatively low minimum density of interface states, Dit ∼3× 1011 cm-2 eV -1, suggesting the potential of Al2O3 ILs for higher- k/Ge interface passivation.

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Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices

Abstract

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