Boron diffusion in TaSi2 thin films

R. Marmelstein; M. Sinder; J. Pelleg

doi:10.1002/(SICI)1521-396X(199807)168:1<223::AID-PSSA223>3.0.CO;2-4

Boron diffusion in TaSi₂ thin films

R. Marmelstein, M. Sinder, J. Pelleg

Department of Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Boron diffusion in TaSi₂ thin films was measured by Secondary Ion Mass Spectrometry (SIMS). Tantalum and silicon were deposited on a (100) silicon wafer in a nominal ratio of 1:2 by co-sputtering followed by sintering at 950 °C for 3 h. The diffusion anneals were performed in the temperature range of 579 to 795 °C. The temperature dependence of D for lattice diffusion is given by D = 6.31 × 10^-11 exp (-1.09 eV/kT) cm²/s. On the basis of the observed activation energy and the low value of the pre-exponential factor a kick-out diffusion mechanism is suggested.

Original language	English
Pages (from-to)	223-229
Number of pages	7
Journal	Physica Status Solidi (A) Applied Research
Volume	168
Issue number	1
DOIs	https://doi.org/10.1002/(SICI)1521-396X(199807)168:1<223::AID-PSSA223>3.0.CO;2-4
State	Published - 1 Jan 1998

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1002/(SICI)1521-396X(199807)168:1<223::AID-PSSA223>3.0.CO;2-4

Cite this

@article{b6e044941c004b6c9cb381f5349de8fb,

title = "Boron diffusion in TaSi2 thin films",

abstract = "Boron diffusion in TaSi2 thin films was measured by Secondary Ion Mass Spectrometry (SIMS). Tantalum and silicon were deposited on a (100) silicon wafer in a nominal ratio of 1:2 by co-sputtering followed by sintering at 950 °C for 3 h. The diffusion anneals were performed in the temperature range of 579 to 795 °C. The temperature dependence of D for lattice diffusion is given by D = 6.31 × 10-11 exp (-1.09 eV/kT) cm2/s. On the basis of the observed activation energy and the low value of the pre-exponential factor a kick-out diffusion mechanism is suggested.",

author = "R. Marmelstein and M. Sinder and J. Pelleg",

year = "1998",

month = jan,

day = "1",

doi = "10.1002/(SICI)1521-396X(199807)168:1<223::AID-PSSA223>3.0.CO;2-4",

language = "English",

volume = "168",

pages = "223--229",

journal = "Physica Status Solidi (A) Applied Research",

issn = "0031-8965",

publisher = "Wiley-VCH Verlag",

number = "1",

}

TY - JOUR

T1 - Boron diffusion in TaSi2 thin films

AU - Marmelstein, R.

AU - Sinder, M.

AU - Pelleg, J.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - Boron diffusion in TaSi2 thin films was measured by Secondary Ion Mass Spectrometry (SIMS). Tantalum and silicon were deposited on a (100) silicon wafer in a nominal ratio of 1:2 by co-sputtering followed by sintering at 950 °C for 3 h. The diffusion anneals were performed in the temperature range of 579 to 795 °C. The temperature dependence of D for lattice diffusion is given by D = 6.31 × 10-11 exp (-1.09 eV/kT) cm2/s. On the basis of the observed activation energy and the low value of the pre-exponential factor a kick-out diffusion mechanism is suggested.

AB - Boron diffusion in TaSi2 thin films was measured by Secondary Ion Mass Spectrometry (SIMS). Tantalum and silicon were deposited on a (100) silicon wafer in a nominal ratio of 1:2 by co-sputtering followed by sintering at 950 °C for 3 h. The diffusion anneals were performed in the temperature range of 579 to 795 °C. The temperature dependence of D for lattice diffusion is given by D = 6.31 × 10-11 exp (-1.09 eV/kT) cm2/s. On the basis of the observed activation energy and the low value of the pre-exponential factor a kick-out diffusion mechanism is suggested.

UR - http://www.scopus.com/inward/record.url?scp=0032116493&partnerID=8YFLogxK

U2 - 10.1002/(SICI)1521-396X(199807)168:1<223::AID-PSSA223>3.0.CO;2-4

DO - 10.1002/(SICI)1521-396X(199807)168:1<223::AID-PSSA223>3.0.CO;2-4

M3 - Article

AN - SCOPUS:0032116493

SN - 0031-8965

VL - 168

SP - 223

EP - 229

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

IS - 1

ER -

Boron diffusion in TaSi₂ thin films

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this