Boron diffusion in TaSi2 thin films was measured by Secondary Ion Mass Spectrometry (SIMS). Tantalum and silicon were deposited on a (100) silicon wafer in a nominal ratio of 1:2 by co-sputtering followed by sintering at 950 °C for 3 h. The diffusion anneals were performed in the temperature range of 579 to 795 °C. The temperature dependence of D for lattice diffusion is given by D = 6.31 × 10-11 exp (-1.09 eV/kT) cm2/s. On the basis of the observed activation energy and the low value of the pre-exponential factor a kick-out diffusion mechanism is suggested.
|Number of pages||7|
|Journal||Physica Status Solidi (A) Applied Research|
|State||Published - 1 Jan 1998|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics