Abstract
The band structure and the electron-phonon coupling are calculated for a σ-band hybridized with a δ1-band using tight-binding parameters fit for V3Si. The hybridization gives rise to a sharp peak in the electronic density of states near the state Γ12 of the δ1-band. The variation of the parameter N(0)I2 (N(0) - the electronic density of states at the Fermi level, I2 - the electron-phonon coupling constant) is studied at the vicinity of the Γ12(δ1) peak. It is found that there is some compensation between N(0) and I2; the narrow δ1-band gives rise to a large value of N(0), but a small value of I2; while the σ-band gives rise to a large value of I2, but a small value of N(0). As a result, the product N(0)I2 does not follow the behavior of N(0) even qualitatively, and it possesses a maximum far from the peak in N(0). Following this calculation, and previous calculations for the δ2 and σ-bands, an approximate relationship is developed for the contribution λito λ, coming from the various sub-bands of the 3d band, depending on the individual width of the sub-band, and its contribution to the density of states.
Original language | English |
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Pages (from-to) | 217-228 |
Number of pages | 12 |
Journal | Synthetic Metals |
Volume | 5 |
Issue number | 3-4 |
DOIs | |
State | Published - 1 Jan 1983 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry