Carburizing of tantalum by radio-frequency plasma assisted chemical vapor deposition

A. Rubinshtein, R. Shneck, A. Raveh, J. E. Klemberg-Sapieha, L. Martinu

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


Tantalum was carburized using inductive radio-frequency plasma assisted chemical vapor deposition. The carburized layers were characterized and the surface properties were investigated. The treatment process was found to be efficient in improving the mechanical properties and chemical stability of tantalum. The carburizing process was governed by the conditions at the plasma-surface boundary: supply of atomic carbon, its surface saturation, solution in the metal, and diffusion towards the depth.

Original languageEnglish
Pages (from-to)2017-2022
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number4 II
StatePublished - 1 Jul 2000
Event46th National Symposium of the American Vacuum Society - Seatlle, WA, USA
Duration: 25 Oct 199929 Oct 1999

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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