Carrier concentration gradient generated in p-type PbTe crystals by unidirectional solidification

M. P. Dariel, Z. Dashevsky, A. Jarashnely, S. Shusterman, A. Horowitz

Research output: Contribution to journalArticlepeer-review

29 Scopus citations


The study was aimed at demonstrating the possibility of producing a graded charge carrier concentration in PbTe crystals by taking advantage of the concentration profile that is set up during solidification from a melt containing an excess of Te. This approach is based on the premise that the carrier concentration can be varied not only by doping with external impurity atoms but also by varying the relative concentration of the constituent elements. An excess of Te in the melt gives rise to crystals having a Pb vacancy (acceptor) concentration. Single PbTe crystals were grown by the Czochralski technique. Hall effect and electrical conductivity were studied in the 80-300K temperature range. The results showed that the carrier concentration increased from 1×1016cm-3-5×1018 cm-3 along the length of the 100mm long crystal. Nonetheless, in the present system, the various material constraints make it doubtful whether actual pre-designed carrier concentration gradients can be set up using this approach.

Original languageEnglish
Pages (from-to)164-170
Number of pages7
JournalJournal of Crystal Growth
Issue number1
StatePublished - 1 Jan 2002


  • A1. Directional solidification
  • A2. Czochralski method
  • B1. Tellurides
  • B2. Semiconducting lead compounds

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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