Carrier lifetimes in periodically δ-doped MQW structures

Anders G. Larsson; Björn Jonsson; Ola Sjölund; Jeffrey G. Cody; Thorvald G. Andersson; Shumin Wang; Ulf Södervall; Daniel H. Rich; Joseph Maserjian

doi:10.1117/12.162781

Carrier lifetimes in periodically δ-doped MQW structures

Anders G. Larsson, Björn Jonsson, Ola Sjölund, Jeffrey G. Cody, Thorvald G. Andersson, Shumin Wang, Ulf Södervall, Daniel H. Rich, Joseph Maserjian

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

The excitation dependent carrier recombination lifetime in periodically 5-doped strained InGaAs/GaAs multiple quantum well structures has been investigated both experimentally and theoretically. Experimentally, we find more than six orders of magnitude increase in the lifetime over that for undoped material due to the spatial separation of photogenerated carriers. This results in strong photo-optic effects and optical nonlinearities. Calculations, on the other hand, predict intrinsic recombination lifetimes in the periodically 5-doped material far above those found experimentally. Using secondary ion mass spectroscopy, transmission electron microscopy, cathodoluminescence imaging, and electron beam induced absorption modulation imaging we find evidence for misfit dislocation related recombination mechanisms that limit the carrier lifetime in the strained quantum well material.

Original language	English
Pages (from-to)	478-489
Number of pages	12
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1985
DOIs	https://doi.org/10.1117/12.162781
State	Published - 1 Jan 1993
Externally published	Yes
Event	Physical Concepts and Materials for Novel Optoelectronic Device Applications II 1993 - Trieste, Italy Duration: 23 May 1993 → 28 May 1993

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.162781

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@article{e7579d7c98934768939ec642f8b8bf6b,

title = "Carrier lifetimes in periodically δ-doped MQW structures",

abstract = "The excitation dependent carrier recombination lifetime in periodically 5-doped strained InGaAs/GaAs multiple quantum well structures has been investigated both experimentally and theoretically. Experimentally, we find more than six orders of magnitude increase in the lifetime over that for undoped material due to the spatial separation of photogenerated carriers. This results in strong photo-optic effects and optical nonlinearities. Calculations, on the other hand, predict intrinsic recombination lifetimes in the periodically 5-doped material far above those found experimentally. Using secondary ion mass spectroscopy, transmission electron microscopy, cathodoluminescence imaging, and electron beam induced absorption modulation imaging we find evidence for misfit dislocation related recombination mechanisms that limit the carrier lifetime in the strained quantum well material.",

author = "Larsson, {Anders G.} and Bj{\"o}rn Jonsson and Ola Sj{\"o}lund and Cody, {Jeffrey G.} and Andersson, {Thorvald G.} and Shumin Wang and Ulf S{\"o}dervall and Rich, {Daniel H.} and Joseph Maserjian",

note = "Funding Information: This work was financially supported by the Swedish Research Council for Engineering Sciences, (TFR). Publisher Copyright: {\textcopyright} 1993 SPIE. All rights reserved.; Physical Concepts and Materials for Novel Optoelectronic Device Applications II 1993 ; Conference date: 23-05-1993 Through 28-05-1993",

year = "1993",

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doi = "10.1117/12.162781",

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journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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TY - JOUR

T1 - Carrier lifetimes in periodically δ-doped MQW structures

AU - Larsson, Anders G.

AU - Jonsson, Björn

AU - Sjölund, Ola

AU - Cody, Jeffrey G.

AU - Andersson, Thorvald G.

AU - Wang, Shumin

AU - Södervall, Ulf

AU - Rich, Daniel H.

AU - Maserjian, Joseph

PY - 1993/1/1

Y1 - 1993/1/1

N2 - The excitation dependent carrier recombination lifetime in periodically 5-doped strained InGaAs/GaAs multiple quantum well structures has been investigated both experimentally and theoretically. Experimentally, we find more than six orders of magnitude increase in the lifetime over that for undoped material due to the spatial separation of photogenerated carriers. This results in strong photo-optic effects and optical nonlinearities. Calculations, on the other hand, predict intrinsic recombination lifetimes in the periodically 5-doped material far above those found experimentally. Using secondary ion mass spectroscopy, transmission electron microscopy, cathodoluminescence imaging, and electron beam induced absorption modulation imaging we find evidence for misfit dislocation related recombination mechanisms that limit the carrier lifetime in the strained quantum well material.

AB - The excitation dependent carrier recombination lifetime in periodically 5-doped strained InGaAs/GaAs multiple quantum well structures has been investigated both experimentally and theoretically. Experimentally, we find more than six orders of magnitude increase in the lifetime over that for undoped material due to the spatial separation of photogenerated carriers. This results in strong photo-optic effects and optical nonlinearities. Calculations, on the other hand, predict intrinsic recombination lifetimes in the periodically 5-doped material far above those found experimentally. Using secondary ion mass spectroscopy, transmission electron microscopy, cathodoluminescence imaging, and electron beam induced absorption modulation imaging we find evidence for misfit dislocation related recombination mechanisms that limit the carrier lifetime in the strained quantum well material.

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U2 - 10.1117/12.162781

DO - 10.1117/12.162781

M3 - Conference article

AN - SCOPUS:84950556684

SN - 0277-786X

VL - 1985

SP - 478

EP - 489

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Physical Concepts and Materials for Novel Optoelectronic Device Applications II 1993

Y2 - 23 May 1993 through 28 May 1993

ER -

Carrier lifetimes in periodically δ-doped MQW structures

Abstract

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