Carrier lifetimes in periodically δ-doped MQW structures

Anders G. Larsson, Björn Jonsson, Ola Sjölund, Jeffrey G. Cody, Thorvald G. Andersson, Shumin Wang, Ulf Södervall, Daniel H. Rich, Joseph Maserjian

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

The excitation dependent carrier recombination lifetime in periodically 5-doped strained InGaAs/GaAs multiple quantum well structures has been investigated both experimentally and theoretically. Experimentally, we find more than six orders of magnitude increase in the lifetime over that for undoped material due to the spatial separation of photogenerated carriers. This results in strong photo-optic effects and optical nonlinearities. Calculations, on the other hand, predict intrinsic recombination lifetimes in the periodically 5-doped material far above those found experimentally. Using secondary ion mass spectroscopy, transmission electron microscopy, cathodoluminescence imaging, and electron beam induced absorption modulation imaging we find evidence for misfit dislocation related recombination mechanisms that limit the carrier lifetime in the strained quantum well material.

Original languageEnglish
Pages (from-to)478-489
Number of pages12
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume1985
DOIs
StatePublished - 1 Jan 1993
Externally publishedYes
EventPhysical Concepts and Materials for Novel Optoelectronic Device Applications II 1993 - Trieste, Italy
Duration: 23 May 199328 May 1993

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