Carrier relaxation and recombination in an InGaN/GaN quantum well probed with time-resolved cathodoluminescence

X. Zhang; D. H. Rich; J. T. Kobayashi; N. P. Kobayashi; P. D. Dapkus

doi:10.1063/1.121966

Carrier relaxation and recombination in an InGaN/GaN quantum well probed with time-resolved cathodoluminescence

X. Zhang, D. H. Rich, J. T. Kobayashi, N. P. Kobayashi, P. D. Dapkus

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50 Scopus citations

Abstract

Spatially, spectrally, and temporally resolved cathodoluminescence (CL) techniques have been employed to examine the optical properties and kinetics of carrier relaxation for metalorganic chemical vapor deposition grown InGaN/GaN single quantum wells (QWs). Cathodoluminescence wavelength imaging of the QW sample revealed local band gap variations, indicating the presence of local In composition fluctuations and segregation during growth. A detailed time-resolved CL study shows that carriers generated in the boundary regions will diffuse toward and recombine at InN-rich centers, resulting in a strong lateral excitonic localization prior to radiative recombination.

Original language	English
Pages (from-to)	1430-1432
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	10
DOIs	https://doi.org/10.1063/1.121966
State	Published - 1 Dec 1998
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{ee7bc4faf280472ca679ea455a02b1ea,

title = "Carrier relaxation and recombination in an InGaN/GaN quantum well probed with time-resolved cathodoluminescence",

abstract = "Spatially, spectrally, and temporally resolved cathodoluminescence (CL) techniques have been employed to examine the optical properties and kinetics of carrier relaxation for metalorganic chemical vapor deposition grown InGaN/GaN single quantum wells (QWs). Cathodoluminescence wavelength imaging of the QW sample revealed local band gap variations, indicating the presence of local In composition fluctuations and segregation during growth. A detailed time-resolved CL study shows that carriers generated in the boundary regions will diffuse toward and recombine at InN-rich centers, resulting in a strong lateral excitonic localization prior to radiative recombination.",

author = "X. Zhang and Rich, {D. H.} and Kobayashi, {J. T.} and Kobayashi, {N. P.} and Dapkus, {P. D.}",

year = "1998",

month = dec,

day = "1",

doi = "10.1063/1.121966",

language = "English",

volume = "73",

pages = "1430--1432",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Carrier relaxation and recombination in an InGaN/GaN quantum well probed with time-resolved cathodoluminescence

AU - Zhang, X.

AU - Rich, D. H.

AU - Kobayashi, J. T.

AU - Kobayashi, N. P.

AU - Dapkus, P. D.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - Spatially, spectrally, and temporally resolved cathodoluminescence (CL) techniques have been employed to examine the optical properties and kinetics of carrier relaxation for metalorganic chemical vapor deposition grown InGaN/GaN single quantum wells (QWs). Cathodoluminescence wavelength imaging of the QW sample revealed local band gap variations, indicating the presence of local In composition fluctuations and segregation during growth. A detailed time-resolved CL study shows that carriers generated in the boundary regions will diffuse toward and recombine at InN-rich centers, resulting in a strong lateral excitonic localization prior to radiative recombination.

AB - Spatially, spectrally, and temporally resolved cathodoluminescence (CL) techniques have been employed to examine the optical properties and kinetics of carrier relaxation for metalorganic chemical vapor deposition grown InGaN/GaN single quantum wells (QWs). Cathodoluminescence wavelength imaging of the QW sample revealed local band gap variations, indicating the presence of local In composition fluctuations and segregation during growth. A detailed time-resolved CL study shows that carriers generated in the boundary regions will diffuse toward and recombine at InN-rich centers, resulting in a strong lateral excitonic localization prior to radiative recombination.

UR - http://www.scopus.com/inward/record.url?scp=0001076073&partnerID=8YFLogxK

U2 - 10.1063/1.121966

DO - 10.1063/1.121966

M3 - Article

AN - SCOPUS:0001076073

SN - 0003-6951

VL - 73

SP - 1430

EP - 1432

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Carrier relaxation and recombination in an InGaN/GaN quantum well probed with time-resolved cathodoluminescence

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