Catalytic hydride vapour phase epitaxy growth of GaN nanowires

George Seryogin, Ilan Shalish, Warren Moberlychan, Venkatesh Narayanamurti

Research output: Contribution to journalArticlepeer-review

81 Scopus citations


Catalytic growth of GaN nanowires by hydride vapour phase epitaxy is demonstrated. Nickel-gold was used as a catalyst. Nanowire growth was limited to areas patterned with catalyst. Characterization of the nanowires with transmission electron microscopy, x-ray diffraction, and low temperature photoluminescence shows that the nanowires are stoichiometric 2H-GaN single crystals growing in the [0001] orientation when grown on sapphire, with occasional stacking faults along the c-axis as the only defect type observed in most of the wires. A red shift observed in the photoluminescence was too large to be explained by the minor strain observed alone, and was only marginally affected by temperature, suggesting a superposition of several factors.

Original languageEnglish
Pages (from-to)2342-2345
Number of pages4
Issue number10
StatePublished - 1 Oct 2005
Externally publishedYes

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering


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