Cathodoluminescence study of band filling and carrier thermalization in GaAs/AlGaAs quantum boxes

D. H. Rich; H. T. Lin; A. Konkar; P. Chen; A. Madhukar

doi:10.1063/1.364008

Cathodoluminescence study of band filling and carrier thermalization in GaAs/AlGaAs quantum boxes

D. H. Rich, H. T. Lin, A. Konkar, P. Chen, A. Madhukar

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We have examined carrier thermalization, recombination, and band filling in GaAs/AlGaAs quantum boxes with low-temperature cathodoluminescence (CL). The temperature dependence of the quantum box CL intensity for T≤ 90 K exhibits an Arrhenius behavior, as a result of carrier thermalization between the quantum box and surrounding barrier regions. The width of the quantum box luminescence is found to increase rapidly with an increasing excitation density and reveals an enhanced phase-space and real-space filling, in comparison to the behavior observed for quantum wells.

Original language	English
Pages (from-to)	1781-1784
Number of pages	4
Journal	Journal of Applied Physics
Volume	81
Issue number	4
DOIs	https://doi.org/10.1063/1.364008
State	Published - 15 Feb 1997
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (all)

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abstract = "We have examined carrier thermalization, recombination, and band filling in GaAs/AlGaAs quantum boxes with low-temperature cathodoluminescence (CL). The temperature dependence of the quantum box CL intensity for T≤ 90 K exhibits an Arrhenius behavior, as a result of carrier thermalization between the quantum box and surrounding barrier regions. The width of the quantum box luminescence is found to increase rapidly with an increasing excitation density and reveals an enhanced phase-space and real-space filling, in comparison to the behavior observed for quantum wells.",

author = "Rich, {D. H.} and Lin, {H. T.} and A. Konkar and P. Chen and A. Madhukar",

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AU - Rich, D. H.

AU - Lin, H. T.

AU - Konkar, A.

AU - Chen, P.

AU - Madhukar, A.

PY - 1997/2/15

Y1 - 1997/2/15

N2 - We have examined carrier thermalization, recombination, and band filling in GaAs/AlGaAs quantum boxes with low-temperature cathodoluminescence (CL). The temperature dependence of the quantum box CL intensity for T≤ 90 K exhibits an Arrhenius behavior, as a result of carrier thermalization between the quantum box and surrounding barrier regions. The width of the quantum box luminescence is found to increase rapidly with an increasing excitation density and reveals an enhanced phase-space and real-space filling, in comparison to the behavior observed for quantum wells.

AB - We have examined carrier thermalization, recombination, and band filling in GaAs/AlGaAs quantum boxes with low-temperature cathodoluminescence (CL). The temperature dependence of the quantum box CL intensity for T≤ 90 K exhibits an Arrhenius behavior, as a result of carrier thermalization between the quantum box and surrounding barrier regions. The width of the quantum box luminescence is found to increase rapidly with an increasing excitation density and reveals an enhanced phase-space and real-space filling, in comparison to the behavior observed for quantum wells.

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U2 - 10.1063/1.364008

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JO - Journal of Applied Physics

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ER -

Cathodoluminescence study of band filling and carrier thermalization in GaAs/AlGaAs quantum boxes

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