Cathodoluminescence study of the influence of misfit dislocations on hole accumulation in an n-AlGaAs/p-GaAs/n-InGaAs heterojunction phototransistor

H. T. Lin; D. H. Rich; O. Sjölund; M. Ghisoni; A. Larsson

doi:10.1063/1.117044

Cathodoluminescence study of the influence of misfit dislocations on hole accumulation in an n-AlGaAs/p-GaAs/n-InGaAs heterojunction phototransistor

H. T. Lin
, D. H. Rich
, O. Sjölund
, M. Ghisoni
, A. Larsson

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We have studied the influence of misfit dislocations on hole accumulation in the base layer of an n-AlGaAs/p-GaAs/n-InGaAs heterojunction phototransistor (HPT). Spatially and temporally resolved cathodoluminescence (CL) measurements reveal that variations in the hole accumulation is caused primarily by strain-induced defects which impede the transport of holes in the collector. The lifetime of holes in the InGaAs/GaAs collector is found to be negligibly affected by the underlying misfit dislocations in the InGaAs/GaAs collector. The reduction in the local electron-beam-induced current signal by the dislocations is less than ∼20%, indicating that these defects have a minor impact on the overall device performance.

Original language	English
Pages (from-to)	1602-1604
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	11
DOIs	https://doi.org/10.1063/1.117044
State	Published - 9 Sep 1996
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.117044

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title = "Cathodoluminescence study of the influence of misfit dislocations on hole accumulation in an n-AlGaAs/p-GaAs/n-InGaAs heterojunction phototransistor",

abstract = "We have studied the influence of misfit dislocations on hole accumulation in the base layer of an n-AlGaAs/p-GaAs/n-InGaAs heterojunction phototransistor (HPT). Spatially and temporally resolved cathodoluminescence (CL) measurements reveal that variations in the hole accumulation is caused primarily by strain-induced defects which impede the transport of holes in the collector. The lifetime of holes in the InGaAs/GaAs collector is found to be negligibly affected by the underlying misfit dislocations in the InGaAs/GaAs collector. The reduction in the local electron-beam-induced current signal by the dislocations is less than ∼20\%, indicating that these defects have a minor impact on the overall device performance.",

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T1 - Cathodoluminescence study of the influence of misfit dislocations on hole accumulation in an n-AlGaAs/p-GaAs/n-InGaAs heterojunction phototransistor

AU - Lin, H. T.

AU - Rich, D. H.

AU - Sjölund, O.

AU - Ghisoni, M.

AU - Larsson, A.

PY - 1996/9/9

Y1 - 1996/9/9

N2 - We have studied the influence of misfit dislocations on hole accumulation in the base layer of an n-AlGaAs/p-GaAs/n-InGaAs heterojunction phototransistor (HPT). Spatially and temporally resolved cathodoluminescence (CL) measurements reveal that variations in the hole accumulation is caused primarily by strain-induced defects which impede the transport of holes in the collector. The lifetime of holes in the InGaAs/GaAs collector is found to be negligibly affected by the underlying misfit dislocations in the InGaAs/GaAs collector. The reduction in the local electron-beam-induced current signal by the dislocations is less than ∼20%, indicating that these defects have a minor impact on the overall device performance.

AB - We have studied the influence of misfit dislocations on hole accumulation in the base layer of an n-AlGaAs/p-GaAs/n-InGaAs heterojunction phototransistor (HPT). Spatially and temporally resolved cathodoluminescence (CL) measurements reveal that variations in the hole accumulation is caused primarily by strain-induced defects which impede the transport of holes in the collector. The lifetime of holes in the InGaAs/GaAs collector is found to be negligibly affected by the underlying misfit dislocations in the InGaAs/GaAs collector. The reduction in the local electron-beam-induced current signal by the dislocations is less than ∼20%, indicating that these defects have a minor impact on the overall device performance.

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DO - 10.1063/1.117044

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IS - 11

ER -

Cathodoluminescence study of the influence of misfit dislocations on hole accumulation in an n-AlGaAs/p-GaAs/n-InGaAs heterojunction phototransistor

Abstract

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