Cathodoluminescence study of the influence of misfit dislocations on hole accumulation in an n-AlGaAs/p-GaAs/n-InGaAs heterojunction phototransistor

H. T. Lin, D. H. Rich, O. Sjölund, M. Ghisoni, A. Larsson

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We have studied the influence of misfit dislocations on hole accumulation in the base layer of an n-AlGaAs/p-GaAs/n-InGaAs heterojunction phototransistor (HPT). Spatially and temporally resolved cathodoluminescence (CL) measurements reveal that variations in the hole accumulation is caused primarily by strain-induced defects which impede the transport of holes in the collector. The lifetime of holes in the InGaAs/GaAs collector is found to be negligibly affected by the underlying misfit dislocations in the InGaAs/GaAs collector. The reduction in the local electron-beam-induced current signal by the dislocations is less than ∼20%, indicating that these defects have a minor impact on the overall device performance.

Original languageEnglish
Pages (from-to)1602-1604
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number11
DOIs
StatePublished - 9 Sep 1996
Externally publishedYes

Fingerprint

Dive into the research topics of 'Cathodoluminescence study of the influence of misfit dislocations on hole accumulation in an n-AlGaAs/p-GaAs/n-InGaAs heterojunction phototransistor'. Together they form a unique fingerprint.

Cite this