Cathodoluminescence wavelength imaging of μm-scale energy variations in InAs/GaAs self-assembled quantum dots

D. H. Rich; C. Zhang; I. Mukhametzhanov; A. Madhukar

doi:10.1063/1.126718

Cathodoluminescence wavelength imaging of μm-scale energy variations in InAs/GaAs self-assembled quantum dots

D. H. Rich, C. Zhang, I. Mukhametzhanov, A. Madhukar

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Abstract

Cathodoluminescence wavelength imaging of InAs/GaAs self-assembled quantum dots (SAQDs) was performed to study the spatial variation in the spectral line shape of the broadened quantum dot (QD) ensemble. The line shape was found to vary on a scale of ∼μm, revealing attendant variations in the size distribution of SAQD clusters on this spatial scale. Energy variations in clusters of SAQDs are found to exhibit a spatial correlation with the efficiency of luminescence and the activation energy for thermal re-emission of carriers. A reduction in the energy variation of the QD clusters occurs when the thickness of the spacer layers in vertically self-organized samples is reduced or the number of stacks is increased.

Original language	English
Pages (from-to)	3597-3599
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	24
DOIs	https://doi.org/10.1063/1.126718
State	Published - 12 Jun 2000
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Cathodoluminescence wavelength imaging of μm-scale energy variations in InAs/GaAs self-assembled quantum dots",

abstract = "Cathodoluminescence wavelength imaging of InAs/GaAs self-assembled quantum dots (SAQDs) was performed to study the spatial variation in the spectral line shape of the broadened quantum dot (QD) ensemble. The line shape was found to vary on a scale of ∼μm, revealing attendant variations in the size distribution of SAQD clusters on this spatial scale. Energy variations in clusters of SAQDs are found to exhibit a spatial correlation with the efficiency of luminescence and the activation energy for thermal re-emission of carriers. A reduction in the energy variation of the QD clusters occurs when the thickness of the spacer layers in vertically self-organized samples is reduced or the number of stacks is increased.",

author = "Rich, {D. H.} and C. Zhang and I. Mukhametzhanov and A. Madhukar",

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journal = "Applied Physics Letters",

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AU - Rich, D. H.

AU - Zhang, C.

AU - Mukhametzhanov, I.

AU - Madhukar, A.

PY - 2000/6/12

Y1 - 2000/6/12

N2 - Cathodoluminescence wavelength imaging of InAs/GaAs self-assembled quantum dots (SAQDs) was performed to study the spatial variation in the spectral line shape of the broadened quantum dot (QD) ensemble. The line shape was found to vary on a scale of ∼μm, revealing attendant variations in the size distribution of SAQD clusters on this spatial scale. Energy variations in clusters of SAQDs are found to exhibit a spatial correlation with the efficiency of luminescence and the activation energy for thermal re-emission of carriers. A reduction in the energy variation of the QD clusters occurs when the thickness of the spacer layers in vertically self-organized samples is reduced or the number of stacks is increased.

AB - Cathodoluminescence wavelength imaging of InAs/GaAs self-assembled quantum dots (SAQDs) was performed to study the spatial variation in the spectral line shape of the broadened quantum dot (QD) ensemble. The line shape was found to vary on a scale of ∼μm, revealing attendant variations in the size distribution of SAQD clusters on this spatial scale. Energy variations in clusters of SAQDs are found to exhibit a spatial correlation with the efficiency of luminescence and the activation energy for thermal re-emission of carriers. A reduction in the energy variation of the QD clusters occurs when the thickness of the spacer layers in vertically self-organized samples is reduced or the number of stacks is increased.

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M3 - Article

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SP - 3597

EP - 3599

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Cathodoluminescence wavelength imaging of μm-scale energy variations in InAs/GaAs self-assembled quantum dots

Abstract

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