Changes in the optical reflectivity of implanted silicon as a function of implantation energy

H. Aharoni; P. L. Swart

doi:10.1063/1.94925

Changes in the optical reflectivity of implanted silicon as a function of implantation energy

H. Aharoni, P. L. Swart

Department of Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Experimental results are presented regarding the changes in optical reflectivity of ³¹p⁺-implanted Si as a function of implantation energy. Three curves of R vs E are obtained for low, intermediate, and high doses. Each of them exhibits distinctly different reflectivity functions. However, they all indicate that the optical behavior at λ=632.8 nm is dominated by optical interference in the damaged layer and the crystalline silicon.

Original language	English
Pages (from-to)	892-894
Number of pages	3
Journal	Applied Physics Letters
Volume	44
Issue number	9
DOIs	https://doi.org/10.1063/1.94925
State	Published - 1 Dec 1984

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Changes in the optical reflectivity of implanted silicon as a function of implantation energy",

abstract = "Experimental results are presented regarding the changes in optical reflectivity of 31p+-implanted Si as a function of implantation energy. Three curves of R vs E are obtained for low, intermediate, and high doses. Each of them exhibits distinctly different reflectivity functions. However, they all indicate that the optical behavior at λ=632.8 nm is dominated by optical interference in the damaged layer and the crystalline silicon.",

author = "H. Aharoni and Swart, {P. L.}",

year = "1984",

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T1 - Changes in the optical reflectivity of implanted silicon as a function of implantation energy

AU - Aharoni, H.

AU - Swart, P. L.

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Y1 - 1984/12/1

N2 - Experimental results are presented regarding the changes in optical reflectivity of 31p+-implanted Si as a function of implantation energy. Three curves of R vs E are obtained for low, intermediate, and high doses. Each of them exhibits distinctly different reflectivity functions. However, they all indicate that the optical behavior at λ=632.8 nm is dominated by optical interference in the damaged layer and the crystalline silicon.

AB - Experimental results are presented regarding the changes in optical reflectivity of 31p+-implanted Si as a function of implantation energy. Three curves of R vs E are obtained for low, intermediate, and high doses. Each of them exhibits distinctly different reflectivity functions. However, they all indicate that the optical behavior at λ=632.8 nm is dominated by optical interference in the damaged layer and the crystalline silicon.

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U2 - 10.1063/1.94925

DO - 10.1063/1.94925

M3 - Article

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SN - 0003-6951

VL - 44

SP - 892

EP - 894

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Changes in the optical reflectivity of implanted silicon as a function of implantation energy

Abstract

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