Changes in the optical reflectivity of implanted silicon as a function of implantation energy

H. Aharoni, P. L. Swart

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Experimental results are presented regarding the changes in optical reflectivity of 31p+-implanted Si as a function of implantation energy. Three curves of R vs E are obtained for low, intermediate, and high doses. Each of them exhibits distinctly different reflectivity functions. However, they all indicate that the optical behavior at λ=632.8 nm is dominated by optical interference in the damaged layer and the crystalline silicon.

Original languageEnglish
Pages (from-to)892-894
Number of pages3
JournalApplied Physics Letters
Volume44
Issue number9
DOIs
StatePublished - 1 Dec 1984

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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