Experimental results are presented regarding the changes in optical reflectivity of 31p+-implanted Si as a function of implantation energy. Three curves of R vs E are obtained for low, intermediate, and high doses. Each of them exhibits distinctly different reflectivity functions. However, they all indicate that the optical behavior at λ=632.8 nm is dominated by optical interference in the damaged layer and the crystalline silicon.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)