Characteristics of n-ZnSe - n-GaAs using metalorganic chemical-vapour desposition

K. Mazuruk, M. Benzaquen, D. Walsh, B. Makuc, H. Jayatirtha, H. Aharoni

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations


Thin epitaxial films of ZnSe were grown on GaAs substrates by a pulsed metalorganic chemical-vapour disposition technique. The X-ray analysis of the layers showed a consistent monocrystalline structure with (100) orientation, and a photoluminescence indicating a low level of residual impurities. The n-ZnSe - n-GaAs heterojunction has been studied on the basis of I-V characteristics and photoresponse, the results being consistent with a staggered-band offset model proposed previously.

Original languageEnglish
Pages (from-to)339-342
Number of pages4
JournalCanadian Journal of Physics
Issue number4
StatePublished - 1 Jan 1989
Externally publishedYes
EventFourth Canadian Semiconductor Technology Conference - Ottawa, Ont, Can
Duration: 1 Aug 19881 Aug 1988

ASJC Scopus subject areas

  • Physics and Astronomy (all)


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