Characteristics of n-ZnSe - n-GaAs using metalorganic chemical-vapour desposition

K. Mazuruk; M. Benzaquen; D. Walsh; B. Makuc; H. Jayatirtha; H. Aharoni

doi:10.1139/p89-059

Characteristics of n-ZnSe - n-GaAs using metalorganic chemical-vapour desposition

K. Mazuruk, M. Benzaquen, D. Walsh, B. Makuc, H. Jayatirtha, H. Aharoni

Research output: Contribution to journal › Conference article › peer-review

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Abstract

Thin epitaxial films of ZnSe were grown on GaAs substrates by a pulsed metalorganic chemical-vapour disposition technique. The X-ray analysis of the layers showed a consistent monocrystalline structure with (100) orientation, and a photoluminescence indicating a low level of residual impurities. The n-ZnSe - n-GaAs heterojunction has been studied on the basis of I-V characteristics and photoresponse, the results being consistent with a staggered-band offset model proposed previously.

Original language	English
Pages (from-to)	339-342
Number of pages	4
Journal	Canadian Journal of Physics
Volume	67
Issue number	4
DOIs	https://doi.org/10.1139/p89-059
State	Published - 1 Jan 1989
Externally published	Yes
Event	Fourth Canadian Semiconductor Technology Conference - Ottawa, Ont, Can Duration: 1 Aug 1988 → 1 Aug 1988

ASJC Scopus subject areas

Physics and Astronomy (all)

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10.1139/p89-059

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abstract = "Thin epitaxial films of ZnSe were grown on GaAs substrates by a pulsed metalorganic chemical-vapour disposition technique. The X-ray analysis of the layers showed a consistent monocrystalline structure with (100) orientation, and a photoluminescence indicating a low level of residual impurities. The n-ZnSe - n-GaAs heterojunction has been studied on the basis of I-V characteristics and photoresponse, the results being consistent with a staggered-band offset model proposed previously.",

author = "K. Mazuruk and M. Benzaquen and D. Walsh and B. Makuc and H. Jayatirtha and H. Aharoni",

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AU - Mazuruk, K.

AU - Benzaquen, M.

AU - Walsh, D.

AU - Makuc, B.

AU - Jayatirtha, H.

AU - Aharoni, H.

PY - 1989/1/1

Y1 - 1989/1/1

N2 - Thin epitaxial films of ZnSe were grown on GaAs substrates by a pulsed metalorganic chemical-vapour disposition technique. The X-ray analysis of the layers showed a consistent monocrystalline structure with (100) orientation, and a photoluminescence indicating a low level of residual impurities. The n-ZnSe - n-GaAs heterojunction has been studied on the basis of I-V characteristics and photoresponse, the results being consistent with a staggered-band offset model proposed previously.

AB - Thin epitaxial films of ZnSe were grown on GaAs substrates by a pulsed metalorganic chemical-vapour disposition technique. The X-ray analysis of the layers showed a consistent monocrystalline structure with (100) orientation, and a photoluminescence indicating a low level of residual impurities. The n-ZnSe - n-GaAs heterojunction has been studied on the basis of I-V characteristics and photoresponse, the results being consistent with a staggered-band offset model proposed previously.

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U2 - 10.1139/p89-059

DO - 10.1139/p89-059

M3 - Conference article

AN - SCOPUS:0024648353

VL - 67

SP - 339

EP - 342

JO - Canadian Journal of Physics

JF - Canadian Journal of Physics

SN - 0008-4204

IS - 4

T2 - Fourth Canadian Semiconductor Technology Conference

Y2 - 1 August 1988 through 1 August 1988

ER -

Characteristics of n-ZnSe - n-GaAs using metalorganic chemical-vapour desposition

Abstract

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