Thin epitaxial films of ZnSe were grown on GaAs substrates by a pulsed metalorganic chemical-vapour disposition technique. The X-ray analysis of the layers showed a consistent monocrystalline structure with (100) orientation, and a photoluminescence indicating a low level of residual impurities. The n-ZnSe - n-GaAs heterojunction has been studied on the basis of I-V characteristics and photoresponse, the results being consistent with a staggered-band offset model proposed previously.
|Number of pages||4|
|Journal||Canadian Journal of Physics|
|State||Published - 1 Jan 1989|
|Event||Fourth Canadian Semiconductor Technology Conference - Ottawa, Ont, Can|
Duration: 1 Aug 1988 → 1 Aug 1988
ASJC Scopus subject areas
- Physics and Astronomy (all)