Characterization of carburized tantalum layers prepared in inductive RF plasma

Keyphrases

• Argon 66%
• Auger Electron Spectroscopy 33%
• Carbide Layer 33%
• Carbide Phase 33%
• Carbon Film 33%
• Carburization 100%
• Carburized Layer 66%
• CH4 Concentration 33%
• Chemical Composition 33%
• Corrosion Resistance 100%
• Diffusion Profile 33%
• Electron Temperature 33%
• Fabrication Conditions 66%
• Film Composition 33%
• High Hardness 33%
• Hydrogen Concentration 33%
• Impedance Analysis 33%
• Inductively Coupled 33%
• Mass Spectrometer 33%
• Mechanical Properties 66%
• Methane 33%
• Methane-hydrogen Mixture 33%
• Micro-scratching 33%
• Microindentation 33%
• Phase Composition 33%
• Phase Content 33%
• Phase Ratio 33%
• Process Duration 33%
• Radio Frequency Plasma 33%
• Resistance Surface 33%
• RF Plasma 100%
• Substrate Temperature 33%
• Surface Chemical Composition 33%
• Tantalum 100%
• Temperature Programmed Desorption 33%
• Time-to-treatment 33%
• Total Gas Pressure 33%
• Vol% 66%
• X Ray Diffraction 33%

Engineering

• Carburizing 25%
• Corrosion Resistance 75%
• Gas Pressure 25%
• Main Process Variable 25%
• Mass Spectrometer 25%
• Methane 75%
• Mixture Temperature 25%
• Phase Ratio 25%
• Programmed Temperature 25%
• Radio Frequency 25%
• Ray Diffraction 25%
• Substrate Temperature 25%
• Thin Layer 25%
• Torr 100%

Material Science

• Auger Electron Spectroscopy 33%
• Carbide 66%
• Carbon Films 33%
• Carburization 33%
• Corrosion Resistance 100%
• Desorption 33%
• Film 33%
• Microhardness 33%
• Tantalum 100%
• X-Ray Diffraction 33%