Characterization of high-temperature PbTe p-n junctions prepared by thermal diffusion and by ion implantation

A. V. Butenko, R. Kahatabi, E. Mogilko, R. Strul, V. Sandomirsky, Y. Schlesinger, Z. Dashevsky, V. Kasiyan, S. Genikhov

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9 Scopus citations


Two types of high-quality PbTe p-n junctions, prepared by thermal diffusion of In4 Te3 gas [thermally diffused junction (TDJ)] and by ion implantation [implanted junction (IJ)] of indium (In-IJ) and zinc (Zn-IJ), have been characterized. Capacitance-voltage and current-voltage characteristics have been measured over a temperature range from ∼10 to ∼180 K. The saturation current density J0 in both diode types was ∼ 10-5 A cm2 at 80 K, while at 180 K, J0 ∼ 10-1 A cm2 in TDJ and ∼1 A cm2 in both IJ diodes. At 80 K, the reverse current started to increase markedly at a bias of ∼400 mV for TDJ and at ∼550 mV for IJ. The ideality factor was about 1.5-2 for both diode types at 80 K. Both diode types were linearly graded. The height of the junction barrier, the concentration and the concentration gradient of the impurities, and the temperature dependence of the static dielectric constant have been determined. The zero-bias resistance times area product (R0 Ae) at 80 K is 850 cm2 for TDJ, 250 cm2 for In-IJ, and ∼80 cm2 for Zn-IJ, while at 180 K, R0 Ae ∼0.38 cm2 for TDJ and ∼0.1 cm2 for both IJ diodes. The estimated detectivity is D* ∼ 1011 cm Hz12 W at T=80 K, determined mainly by background radiation, while at T=180 K, D* decreases to 5× 109 - 1010 cm Hz12 W and is determined by the Johnson noise.

Original languageEnglish
Article number024506
JournalJournal of Applied Physics
Issue number2
StatePublished - 7 Feb 2008

ASJC Scopus subject areas

  • Physics and Astronomy (all)


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