Characterization Of Low-Doped Metal Oxide Semiconductor (MOS) Structures Using Pulsed Photoinjection

Keyphrases

• Doping Level 100%
• Capacitance 100%
• Metal-oxide-semiconductor Structure 100%
• Doped Metal Oxides 100%
• Photoinjection 100%
• Diffusion Length 50%
• Metal Oxide Semiconductor 50%
• Doped Semiconductor 50%
• Deep Depletion 50%
• Depletion Region 50%
• Partial Collapse 50%
• Infill 50%
• Photocharging 50%
• Edge Injection 50%
• Minority Carrier Lifetime 50%

Engineering

• Doping Level 100%
• Metal Oxide Semiconductor 100%
• Semiconductor Structure 100%
• Diffusion Length 50%
• Minority Carriers 50%
• Carrier Lifetime 50%
• Depletion Region 50%

Material Science

• Capacitance 100%
• Metal Oxide 100%
• Oxide Semiconductor 100%
• Semiconductor Structure 100%
• Carrier Lifetime 50%