Abstract
IV-VI compound semiconductors are of interest due to their potential application as thermoelectric material, infrared detectors and semiconductor lasers. The use of PbTe based semiconductors is usually in the middle and far infrared region. Magnetron sputtering of PbTe thin films from a single target on Si (111) was performed under various conditions. Characterization of the films shows that PbTe films on Si (111) substrate are suitable for preparation of infrared (IR) detectors. By heat treatment novel IR detectors can be developed in the electron absorption region of 4 - 10 μm.
Original language | English |
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Pages (from-to) | 271-275 |
Number of pages | 5 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 744 |
DOIs | |
State | Published - 1 Jan 2002 |
Event | Quantum Confined Semiconductor Nanostructures - Boston MA, United States Duration: 2 Dec 2002 → 5 Dec 2002 |
ASJC Scopus subject areas
- Materials Science (all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering