Characterization of sputter deposited PbTe on Si (111) for optoelectronic applications

Alexey Jdanov, Zinovi Dashevsky, Joshua Pelleg, Roni Shneck

Research output: Contribution to journalConference articlepeer-review


IV-VI compound semiconductors are of interest due to their potential application as thermoelectric material, infrared detectors and semiconductor lasers. The use of PbTe based semiconductors is usually in the middle and far infrared region. Magnetron sputtering of PbTe thin films from a single target on Si (111) was performed under various conditions. Characterization of the films shows that PbTe films on Si (111) substrate are suitable for preparation of infrared (IR) detectors. By heat treatment novel IR detectors can be developed in the electron absorption region of 4 - 10 μm.

Original languageEnglish
Pages (from-to)271-275
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1 Jan 2002
EventQuantum Confined Semiconductor Nanostructures - Boston MA, United States
Duration: 2 Dec 20025 Dec 2002

ASJC Scopus subject areas

  • Materials Science (all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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