Characterization of sputter deposited PbTe on Si (111) for optoelectronic applications

Alexey Jdanov; Zinovi Dashevsky; Joshua Pelleg; Roni Shneck

doi:10.1557/proc-744-m5.29

Characterization of sputter deposited PbTe on Si (111) for optoelectronic applications

Alexey Jdanov, Zinovi Dashevsky, Joshua Pelleg, Roni Shneck

Department of Materials Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

IV-VI compound semiconductors are of interest due to their potential application as thermoelectric material, infrared detectors and semiconductor lasers. The use of PbTe based semiconductors is usually in the middle and far infrared region. Magnetron sputtering of PbTe thin films from a single target on Si (111) was performed under various conditions. Characterization of the films shows that PbTe films on Si (111) substrate are suitable for preparation of infrared (IR) detectors. By heat treatment novel IR detectors can be developed in the electron absorption region of 4 - 10 μm.

Original language	English
Pages (from-to)	271-275
Number of pages	5
Journal	Materials Research Society Symposium - Proceedings
Volume	744
DOIs	https://doi.org/10.1557/proc-744-m5.29
State	Published - 1 Jan 2002
Event	Quantum Confined Semiconductor Nanostructures - Boston MA, United States Duration: 2 Dec 2002 → 5 Dec 2002

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Characterization of sputter deposited PbTe on Si (111) for optoelectronic applications",

abstract = "IV-VI compound semiconductors are of interest due to their potential application as thermoelectric material, infrared detectors and semiconductor lasers. The use of PbTe based semiconductors is usually in the middle and far infrared region. Magnetron sputtering of PbTe thin films from a single target on Si (111) was performed under various conditions. Characterization of the films shows that PbTe films on Si (111) substrate are suitable for preparation of infrared (IR) detectors. By heat treatment novel IR detectors can be developed in the electron absorption region of 4 - 10 μm.",

author = "Alexey Jdanov and Zinovi Dashevsky and Joshua Pelleg and Roni Shneck",

year = "2002",

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doi = "10.1557/proc-744-m5.29",

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journal = "Materials Research Society Symposium - Proceedings",

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note = "Quantum Confined Semiconductor Nanostructures ; Conference date: 02-12-2002 Through 05-12-2002",

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AU - Jdanov, Alexey

AU - Dashevsky, Zinovi

AU - Pelleg, Joshua

AU - Shneck, Roni

PY - 2002/1/1

Y1 - 2002/1/1

N2 - IV-VI compound semiconductors are of interest due to their potential application as thermoelectric material, infrared detectors and semiconductor lasers. The use of PbTe based semiconductors is usually in the middle and far infrared region. Magnetron sputtering of PbTe thin films from a single target on Si (111) was performed under various conditions. Characterization of the films shows that PbTe films on Si (111) substrate are suitable for preparation of infrared (IR) detectors. By heat treatment novel IR detectors can be developed in the electron absorption region of 4 - 10 μm.

AB - IV-VI compound semiconductors are of interest due to their potential application as thermoelectric material, infrared detectors and semiconductor lasers. The use of PbTe based semiconductors is usually in the middle and far infrared region. Magnetron sputtering of PbTe thin films from a single target on Si (111) was performed under various conditions. Characterization of the films shows that PbTe films on Si (111) substrate are suitable for preparation of infrared (IR) detectors. By heat treatment novel IR detectors can be developed in the electron absorption region of 4 - 10 μm.

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U2 - 10.1557/proc-744-m5.29

DO - 10.1557/proc-744-m5.29

M3 - Conference article

AN - SCOPUS:0038488379

SN - 0272-9172

VL - 744

SP - 271

EP - 275

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Quantum Confined Semiconductor Nanostructures

Y2 - 2 December 2002 through 5 December 2002

ER -

Characterization of sputter deposited PbTe on Si (111) for optoelectronic applications

Abstract

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