Characterization of structural defects in highly mismatched GaP nanowires

Ya'Akov Greenberg, Sergei Remennik, Shimon Cohen, Dan Ritter, Louisa Meshi

Research output: Contribution to journalArticlepeer-review

Abstract

Structural defects, found in gallium-phosphide nanowires, grown from Au catalyst on InP 〈111〉B substrate using metal organic molecular beam epitaxy, were extensively studied using Transmission Electron Microscopy (TEM). Several types of growth were analyzed: pure axial, axial-lateral and self catalyzed. Pure axially grown nanowires were found to be single crystals with wurzite crystal structure and Ga-polarity. These nanowires contained threading edge dislocation along the wire axis. The axial-lateral nanowires grew with zinc blend crystal structure and exhibited polycrystalline nature. Self catalyzed single crystalline nanowires possessed wurzite crystal structure with P-polarity and exhibited threading edge dislocations along their axis.

Original languageEnglish
Pages (from-to)38-41
Number of pages4
JournalMaterials Letters
Volume113
DOIs
StatePublished - 14 Oct 2013

Keywords

  • Nanocrystalline materials
  • Semiconductors
  • Structural analysis

ASJC Scopus subject areas

  • Materials Science (all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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