Abstract
X-ray techniques were employed to characterize the interfacial region in the Si-on-sapphire heterostructure. Strained interfacial layer is formed at the top of the sapphire substrate. Application of the biaxial strain model to the strain-stress relation transformed to the actual crystal system attached to the sapphire surface (011̄2) allowed to derive the strain/stress tensor at the interface. In this mismatched heterostructure the wafer aquires an overall curvature and the elastic anisotropicity, in particular that of the sapphire substrate, has a detrimental effect on the surface topography of the Si epilayers. The bending profile visualized in the laser light interference patterns reflects the strain/stress distribution determined for the interfacial layer.
| Original language | English |
|---|---|
| Pages (from-to) | 568-573 |
| Number of pages | 6 |
| Journal | Materials Science Forum |
| Volume | 347 |
| DOIs | |
| State | Published - 1 Jan 2000 |
| Event | Proceedings of the 5th European Conference on Residual Stresses - Delft-Noordwijkerhout, Neth Duration: 28 Sep 1999 → 30 Sep 1999 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering