Charge transfer doping of silicon

K. J. Rietwyk, Y. Smets, M. Bashouti, S. H. Christiansen, A. Schenk, A. Tadich, M. T. Edmonds, J. Ristein, L. Ley, C. I. Pakes

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

We demonstrate a novel doping mechanism of silicon, namely n-type transfer doping by adsorbed organic cobaltocene (CoCp2*) molecules. The amount of transferred charge as a function of coverage is monitored by following the ensuing band bending via surface sensitive core-level photoelectron spectroscopy. The concomitant loss of electrons in the CoCp2* adlayer is quantified by the relative intensities of chemically shifted Co2p components in core-level photoelectron spectroscopy which correspond to charged and neutral molecules. Using a previously developed model for transfer doping, the evolution in relative intensities of the two components as a function of coverage has been reproduced successfully. A single, molecule-specific parameter, the negative donor energy of (0.50±0.15)eV suffices to describe the self-limiting doping process with a maximum areal density of transferred electrons of 2×1013cm2 in agreement with the measured downward band bending. The advantage of this doping mechanism over conventional doping for nanostructures is addressed.

Original languageEnglish
Article number155502
JournalPhysical Review Letters
Volume112
Issue number15
DOIs
StatePublished - 18 Apr 2014
Externally publishedYes

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