Chemical epitaxy of a new orthorhombic phase of Cu2-: XS on GaAs

Ofir Friedman; Dor Braun; Nitzan Maman; Vladimir Ezersky; Yuval Golan

doi:10.1039/c9ce01096c

Chemical epitaxy of a new orthorhombic phase of Cu_{2-: X}S on GaAs

Ofir Friedman, Dor Braun, Nitzan Maman, Vladimir Ezersky, Yuval Golan

Research output: Contribution to journal › Article › peer-review

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Abstract

We report a new binary base-centered orthorhombic phase of Cu_2-xS. The new phase was obtained by chemical epitaxy on the (001), (111)A and (111)B faces of GaAs. Chemical analysis showed a Cu to S ratio of slightly less than 2 : 1, along with no evidence for other cations which can potentially replace Cu. Cross-sectional and plan-view samples were studied by TEM along multiple zone axes of Cu_2-xS films and several GaAs orientations. Electron diffraction and fast Fourier transform patterns were analyzed and compared to the simulated data of known Cu_2-xS phases with no match. A match was found with a new, base-centered orthorhombic unit cell with lattice parameters of a ≈ b = 5.6 Å and c = 11.2 Å. Seven different variations confirmed the well-defined orientation relationship existing between the base-centered orthorhombic phase of Cu_2-xS and the GaAs substrate.

Original language	English
Pages (from-to)	6063-6071
Number of pages	9
Journal	CrystEngComm
Volume	21
Issue number	40
DOIs	https://doi.org/10.1039/c9ce01096c
State	Published - 1 Jan 2019

ASJC Scopus subject areas

General Chemistry
General Materials Science
Condensed Matter Physics

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title = "Chemical epitaxy of a new orthorhombic phase of Cu2-: XS on GaAs",

abstract = "We report a new binary base-centered orthorhombic phase of Cu2-xS. The new phase was obtained by chemical epitaxy on the (001), (111)A and (111)B faces of GaAs. Chemical analysis showed a Cu to S ratio of slightly less than 2 : 1, along with no evidence for other cations which can potentially replace Cu. Cross-sectional and plan-view samples were studied by TEM along multiple zone axes of Cu2-xS films and several GaAs orientations. Electron diffraction and fast Fourier transform patterns were analyzed and compared to the simulated data of known Cu2-xS phases with no match. A match was found with a new, base-centered orthorhombic unit cell with lattice parameters of a ≈ b = 5.6 {\AA} and c = 11.2 {\AA}. Seven different variations confirmed the well-defined orientation relationship existing between the base-centered orthorhombic phase of Cu2-xS and the GaAs substrate.",

author = "Ofir Friedman and Dor Braun and Nitzan Maman and Vladimir Ezersky and Yuval Golan",

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AU - Friedman, Ofir

AU - Braun, Dor

AU - Maman, Nitzan

AU - Ezersky, Vladimir

AU - Golan, Yuval

PY - 2019/1/1

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N2 - We report a new binary base-centered orthorhombic phase of Cu2-xS. The new phase was obtained by chemical epitaxy on the (001), (111)A and (111)B faces of GaAs. Chemical analysis showed a Cu to S ratio of slightly less than 2 : 1, along with no evidence for other cations which can potentially replace Cu. Cross-sectional and plan-view samples were studied by TEM along multiple zone axes of Cu2-xS films and several GaAs orientations. Electron diffraction and fast Fourier transform patterns were analyzed and compared to the simulated data of known Cu2-xS phases with no match. A match was found with a new, base-centered orthorhombic unit cell with lattice parameters of a ≈ b = 5.6 Å and c = 11.2 Å. Seven different variations confirmed the well-defined orientation relationship existing between the base-centered orthorhombic phase of Cu2-xS and the GaAs substrate.

AB - We report a new binary base-centered orthorhombic phase of Cu2-xS. The new phase was obtained by chemical epitaxy on the (001), (111)A and (111)B faces of GaAs. Chemical analysis showed a Cu to S ratio of slightly less than 2 : 1, along with no evidence for other cations which can potentially replace Cu. Cross-sectional and plan-view samples were studied by TEM along multiple zone axes of Cu2-xS films and several GaAs orientations. Electron diffraction and fast Fourier transform patterns were analyzed and compared to the simulated data of known Cu2-xS phases with no match. A match was found with a new, base-centered orthorhombic unit cell with lattice parameters of a ≈ b = 5.6 Å and c = 11.2 Å. Seven different variations confirmed the well-defined orientation relationship existing between the base-centered orthorhombic phase of Cu2-xS and the GaAs substrate.

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Chemical epitaxy of a new orthorhombic phase of Cu_{2-: X}S on GaAs

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