Chemical vapor deposition of Ge on Si from GeH4-He gas mixtures

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4 Scopus citations


The CVD of Ge on (111)Si substrates by means of pyrolytic decomposition of GeH4 diluted in He gas is described. Experiments were made to investigate the characteristics of such depositions obtained under varying growth temperatures. The results indicated the occurence of depositions in the form of "islands", with a high degree of preferred orientation toward (111), ranging from 93.2-99.9%.

Original languageEnglish
Pages (from-to)600-601
Number of pages2
JournalJournal of Crystal Growth
Issue number3
StatePublished - 1 Jan 1981

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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