TY - JOUR
T1 - Chemical vapor deposition of Ge on Si from GeH4-He gas mixtures
AU - Aharoni, Herzl
N1 - Funding Information:
* The research described in this letter was performed at the Jet Propulsion Laboratory, California Institute of Technol-ogy, and was sponsored by the National Aeronautics and Space Administration, Office of Aeronautics and Space Technology, under contract NAS7-100 with the Jet Propul-sion Laboratory and by the United States Air Force at Wright—Patterson Air Force Base through an agreement with the National Aeronautics and Space Administration. The work by Herzl Aharoni was performed while assigned to JPL by the US National Research Council as a Resident Research Associate. Herzl Aharoni is a Faculty Member of the Department of Electrical Engineering, Ben-Gurion Uni-versity of the Negev, Beer-Sheva, Israel.
PY - 1981/1/1
Y1 - 1981/1/1
N2 - The CVD of Ge on (111)Si substrates by means of pyrolytic decomposition of GeH4 diluted in He gas is described. Experiments were made to investigate the characteristics of such depositions obtained under varying growth temperatures. The results indicated the occurence of depositions in the form of "islands", with a high degree of preferred orientation toward (111), ranging from 93.2-99.9%.
AB - The CVD of Ge on (111)Si substrates by means of pyrolytic decomposition of GeH4 diluted in He gas is described. Experiments were made to investigate the characteristics of such depositions obtained under varying growth temperatures. The results indicated the occurence of depositions in the form of "islands", with a high degree of preferred orientation toward (111), ranging from 93.2-99.9%.
UR - http://www.scopus.com/inward/record.url?scp=49049149800&partnerID=8YFLogxK
U2 - 10.1016/0022-0248(81)90521-2
DO - 10.1016/0022-0248(81)90521-2
M3 - Letter
AN - SCOPUS:49049149800
SN - 0022-0248
VL - 54
SP - 600
EP - 601
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 3
ER -