Abstract
In this work based on a unique sub-micron scanning system (S-cube system) measurements the lateral photoresponse and crosstalk (CTK) in CMOS active pixel sensor (APS) has been investigated and an analytical model was developed for crosstalk estimation in photodiode based CMOS APS arrays. Based on handy process and design data only, our model estimates the CTK contribution to the readout pixel from each particular neighbor. It reveals the photosignal and the CTK dependence on the pixels geometrical shape (the photodiode active area and perimeter) and the pixels arrangement within the array and brings out clearly the possibility of a design enabling minimum and symmetrical CTK, and thus can be used as a predictive tool for design optimization. The trends that promise to increase CMOS image sensor performance are presented and design tradeoffs intended to optimize the photoresponse and minimize crosstalk are discussed.
| Original language | English |
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| Pages | 1261-1264 |
| Number of pages | 4 |
| State | Published - 1 Dec 2004 |
| Event | IEEE Sensors 2004 - Vienna, Austria Duration: 24 Oct 2004 → 27 Oct 2004 |
Conference
| Conference | IEEE Sensors 2004 |
|---|---|
| Country/Territory | Austria |
| City | Vienna |
| Period | 24/10/04 → 27/10/04 |
Keywords
- Active Pixel Sensor (APS)
- CMOS image sensor
- Crosstalk
- Diffusion process
- Modeling
- Parameter estimation
ASJC Scopus subject areas
- Electrical and Electronic Engineering