Abstract
Considerations for CMOS image sensors with self-power generation capability design are presented. Design of CMOS imagers, utilizing self-powered sensors (SPS) is a new approach for ultra low-power CMOS active pixel sensors (APS) implementations. The SPS architecture allows generation of electric power by employing a light sensitive device, located on the same silicon die with an APS and thus reduces power dissipation from the conventional power supply. A detailed analysis of the SPS structure is carried out, with respect to power dissipation requirements, sensor area and power generation efficiency, showing advantages and drawbacks of the proposed concept. An illustrative example of CMOS imager with self-power generation capability in 0.18- μ m standard CMOS technology is discussed. Measurements from a test chip, implemented in 0.18-μm CMOS process, are presented.
| Original language | English |
|---|---|
| Pages (from-to) | 1210-1214 |
| Number of pages | 5 |
| Journal | IEEE Transactions on Circuits and Systems II: Express Briefs |
| Volume | 53 |
| Issue number | 11 |
| DOIs | |
| State | Published - 1 Jan 2006 |
| Externally published | Yes |
Keywords
- Active pixel sensor (APS)
- low-power sensor
- power generated photo diode (PGPd)
- self-powered sensor (SPS)
ASJC Scopus subject areas
- Electrical and Electronic Engineering