Abstract
2D-Bi2Se3 nanostructures with few quintuple layers (QLs) thickness have emerged new exciting material due its topological insulator properties. The surface conductivity of these exotic materials is highly influenced by their layer thickness. In contrast to traditional MBE, CVD techniques, these structures can be alternatively produced in solution phase with controlled and uniform thickness (~5 -10 QL) that is small compared to their lateral dimensions. Moreover, incorporating dopants like Mn2+, Sb3+ and Cu2+ into these topological insulators can alter their chemical potential which also provides us additional degree of freedom which can be used to tune their properties by varying their composition. These doped-Bi2Se3 nanostructures have possibilities to open new door for device engineering in the field of spin-tronics and low-energy electronics.
Original language | English |
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DOIs | |
State | Published - 10 Feb 2016 |
Event | ICS - Duration: 29 Feb 2016 → … |
Conference
Conference | ICS |
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Period | 29/02/16 → … |