COLLOIDAL PRODUCTION OF ULTRATHIN 2D-Bi2Se3 TOPOLOGICAL INSULATOR AND ITS DOPED ANALOGUES

Keyphrases

• Ultrathin 100%
• Topological Insulator 100%
• Bismuth Telluride 100%
• Layer Thickness 66%
• Nanostructures 66%
• Quintuple Layers 66%
• Solution Phase 33%
• Uniform Thickness 33%
• Chemical Potential 33%
• Mn2+ 33%
• Cu2+ 33%
• Dopant 33%
• Extra Degree of Freedom 33%
• Lateral Dimension 33%
• Controlled Thickness 33%
• Device Engineering 33%
• Surface Conductivity 33%
• Sb3+ 33%
• Exotic Material 33%
• CVD Method 33%
• Insulator Properties 33%
• Low-energy Electronics 33%

Engineering

• Layer Thickness 100%
• Engineering 50%
• Chemical Vapor Deposition 50%
• Chemical Potential 50%
• Degree of Freedom 50%
• Dopants 50%
• Additional Degree 50%

Material Science

• Nanocrystalline Material 100%
• Molecular Beam Epitaxy 50%
• Chemical Vapor Deposition 50%
• Doping (Additives) 50%