Comment of 'Low-temperature transport properties of non-stoichiometric La0.95-xSrxMnO3

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Abstract

In a recent paper Michalopoulou et al (Michalopolou A, Syskakis E and Papastaikoudis C 2001 J. Phys.: Condens. Matter 13 11 615) reported the measurements of electrical resistivity and specific heat at zero magnetic field carried out on polycrystalline non-stoichiometric La0.95-xSrxMnO3 manganites. In particular, the authors attributed the low temperature (LT) behaviour of resistivity (shallow minimum and slight upturn at lowest temperatures) to three-dimensional electron-electron interaction enhanced by disorder, using results of numerical fittings of resistivity versus temperature dependences in the interval 4.2-40 K. It is shown in this comment that such analysis may be not valid for polycrystalline manganites where relatively strong grain boundary effects might mask a weak contribution of quantum effects to the LT resistivity. The crucial test of applicability of the theory of quantum corrections to conductivity in this case is the resistive measurements under non-zero magnetic field.

Original languageEnglish
Pages (from-to)8755-8757
Number of pages3
JournalJournal of Physics Condensed Matter
Volume14
Issue number37
DOIs
StatePublished - 23 Sep 2002

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