Comparative Analysis of Si PERT Cells with n-p-p and n-n-p Structures.

Lev Kreinin; Ygal Eisenberg; Jayaprasad Arumughan; Christoph Peter; Naftali Eisenberg

doi:10.1109/PVSC.2018.8547967

Comparative Analysis of Si PERT Cells with n-p-p and n-n-p Structures.

Lev Kreinin
, Ygal Eisenberg
, Jayaprasad Arumughan
, Christoph Peter
, Naftali Eisenberg

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Two sets of bifacial n-p-p and n-n-p solar cells were fabricated using single-crystalline Cz Si. The cells of both sets have identical n-layers with a sheet resistance, Rsh of 85 \Omega /\square . In the same time the p-layers of the cells of the each set differ in B doping levels: Rsh are 140 and 45 \Omega /\square . While implied Voc of the contactless structure tends to increase with increasing Rsh, the effective velocity of the back surface recombination, Seff, in complete n-p-p cell is contrariwise depending of Rsh. The last statement is based on the analysis of the measurements of spectral IQE of the cells.

Original language	English
Title of host publication	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
Publisher	Institute of Electrical and Electronics Engineers
Pages	1025-1028
Number of pages	4
ISBN (Electronic)	9781538685297
DOIs	https://doi.org/10.1109/PVSC.2018.8547967
State	Published - 26 Nov 2018
Externally published	Yes
Event	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: 10 Jun 2018 → 15 Jun 2018

Publication series

Name	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

Conference

Conference	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Country/Territory	United States
City	Waikoloa Village
Period	10/06/18 → 15/06/18

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

bifacial solar cells
metal/silicon interface
silicon
surface recombination

ASJC Scopus subject areas

Energy Engineering and Power Technology
Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/PVSC.2018.8547967

Cite this

Kreinin, L., Eisenberg, Y., Arumughan, J., Peter, C., & Eisenberg, N. (2018). Comparative Analysis of Si PERT Cells with n-p-p and n-n-p Structures. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC (pp. 1025-1028). Article 8547967 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/PVSC.2018.8547967

Kreinin, Lev ; Eisenberg, Ygal ; Arumughan, Jayaprasad et al. / Comparative Analysis of Si PERT Cells with n-p-p and n-n-p Structures. 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers, 2018. pp. 1025-1028 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC).

@inproceedings{d74388d308414e3cad13e67e20ca99b5,

title = "Comparative Analysis of Si PERT Cells with n-p-p and n-n-p Structures.",

abstract = "Two sets of bifacial n-p-p and n-n-p solar cells were fabricated using single-crystalline Cz Si. The cells of both sets have identical n-layers with a sheet resistance, Rsh of 85 \textbackslash{}Omega /\textbackslash{}square . In the same time the p-layers of the cells of the each set differ in B doping levels: Rsh are 140 and 45 \textbackslash{}Omega /\textbackslash{}square . While implied Voc of the contactless structure tends to increase with increasing Rsh, the effective velocity of the back surface recombination, Seff, in complete n-p-p cell is contrariwise depending of Rsh. The last statement is based on the analysis of the measurements of spectral IQE of the cells.",

keywords = "bifacial solar cells, metal/silicon interface, silicon, surface recombination",

author = "Lev Kreinin and Ygal Eisenberg and Jayaprasad Arumughan and Christoph Peter and Naftali Eisenberg",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 ; Conference date: 10-06-2018 Through 15-06-2018",

year = "2018",

month = nov,

day = "26",

doi = "10.1109/PVSC.2018.8547967",

language = "English",

series = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC",

publisher = "Institute of Electrical and Electronics Engineers",

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booktitle = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC",

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}

Kreinin, L, Eisenberg, Y, Arumughan, J, Peter, C & Eisenberg, N 2018, Comparative Analysis of Si PERT Cells with n-p-p and n-n-p Structures. in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC., 8547967, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, Institute of Electrical and Electronics Engineers, pp. 1025-1028, 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States, 10/06/18. https://doi.org/10.1109/PVSC.2018.8547967

Comparative Analysis of Si PERT Cells with n-p-p and n-n-p Structures. / Kreinin, Lev; Eisenberg, Ygal; Arumughan, Jayaprasad et al.
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers, 2018. p. 1025-1028 8547967 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Comparative Analysis of Si PERT Cells with n-p-p and n-n-p Structures.

AU - Kreinin, Lev

AU - Eisenberg, Ygal

AU - Arumughan, Jayaprasad

AU - Peter, Christoph

AU - Eisenberg, Naftali

PY - 2018/11/26

Y1 - 2018/11/26

N2 - Two sets of bifacial n-p-p and n-n-p solar cells were fabricated using single-crystalline Cz Si. The cells of both sets have identical n-layers with a sheet resistance, Rsh of 85 \Omega /\square . In the same time the p-layers of the cells of the each set differ in B doping levels: Rsh are 140 and 45 \Omega /\square . While implied Voc of the contactless structure tends to increase with increasing Rsh, the effective velocity of the back surface recombination, Seff, in complete n-p-p cell is contrariwise depending of Rsh. The last statement is based on the analysis of the measurements of spectral IQE of the cells.

AB - Two sets of bifacial n-p-p and n-n-p solar cells were fabricated using single-crystalline Cz Si. The cells of both sets have identical n-layers with a sheet resistance, Rsh of 85 \Omega /\square . In the same time the p-layers of the cells of the each set differ in B doping levels: Rsh are 140 and 45 \Omega /\square . While implied Voc of the contactless structure tends to increase with increasing Rsh, the effective velocity of the back surface recombination, Seff, in complete n-p-p cell is contrariwise depending of Rsh. The last statement is based on the analysis of the measurements of spectral IQE of the cells.

KW - bifacial solar cells

KW - metal/silicon interface

KW - silicon

KW - surface recombination

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M3 - Conference contribution

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T3 - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

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BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

PB - Institute of Electrical and Electronics Engineers

T2 - 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018

Y2 - 10 June 2018 through 15 June 2018

ER -

Kreinin L, Eisenberg Y, Arumughan J, Peter C, Eisenberg N. Comparative Analysis of Si PERT Cells with n-p-p and n-n-p Structures. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers. 2018. p. 1025-1028. 8547967. (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). doi: 10.1109/PVSC.2018.8547967

Comparative Analysis of Si PERT Cells with n-p-p and n-n-p Structures.

Abstract

Publication series

Conference

UN SDGs

Keywords

ASJC Scopus subject areas

Access to Document

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