Comparative numerical analysis of ReS2and CdS buffer layer for CdTe thin film solar cells

C. Sreelakshmi; Kuraganti Vasu

doi:10.1063/5.0178148

Comparative numerical analysis of ReS₂and CdS buffer layer for CdTe thin film solar cells

C. Sreelakshmi, Kuraganti Vasu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In the view of design and development of CdTe solar cell alternative buffer layer, here we conducted comparative numerical simulation study on ReS2 and CdS buffer layers. Our results suggest that lattice matching ReS2 buffer layer with CdTe absorber layer show improved cell parameter as compared to CdS buffer layer. The best cell structure composed of ITO/ReS2/CdTe layers shows JSC = 27mA/cm2, VOC = 0.887V and QE = 17.5% at higher absorber layer thickness of 3000nm.

Original language	English
Title of host publication	AIP Conference Proceedings
Editors	Ajay Kumar Mishra, Mohit Tyagi, D. V. Udupa, Sanjeeb Kumar Rout
Publisher	American Institute of Physics Inc.
Edition	1
ISBN (Electronic)	9780735447646
DOIs	https://doi.org/10.1063/5.0178148
State	Published - 12 Jan 2024
Externally published	Yes
Event	66th DAE Solid State Physics Symposium, DAE-SSPS 2022 - Ranchi, India Duration: 18 Dec 2022 → 22 Dec 2022

Publication series

Name	AIP Conference Proceedings
Number	1
Volume	2995
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	66th DAE Solid State Physics Symposium, DAE-SSPS 2022
Country/Territory	India
City	Ranchi
Period	18/12/22 → 22/12/22

ASJC Scopus subject areas

General Physics and Astronomy

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1063/5.0178148

Cite this

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title = "Comparative numerical analysis of ReS2and CdS buffer layer for CdTe thin film solar cells",

abstract = "In the view of design and development of CdTe solar cell alternative buffer layer, here we conducted comparative numerical simulation study on ReS2 and CdS buffer layers. Our results suggest that lattice matching ReS2 buffer layer with CdTe absorber layer show improved cell parameter as compared to CdS buffer layer. The best cell structure composed of ITO/ReS2/CdTe layers shows JSC = 27mA/cm2, VOC = 0.887V and QE = 17.5% at higher absorber layer thickness of 3000nm.",

author = "C. Sreelakshmi and Kuraganti Vasu",

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Sreelakshmi, C & Vasu, K 2024, Comparative numerical analysis of ReS₂and CdS buffer layer for CdTe thin film solar cells. in AK Mishra, M Tyagi, DV Udupa & SK Rout (eds), AIP Conference Proceedings. 1 edn, 020196, AIP Conference Proceedings, no. 1, vol. 2995, American Institute of Physics Inc., 66th DAE Solid State Physics Symposium, DAE-SSPS 2022, Ranchi, India, 18/12/22. https://doi.org/10.1063/5.0178148

Comparative numerical analysis of ReS₂and CdS buffer layer for CdTe thin film solar cells. / Sreelakshmi, C.; Vasu, Kuraganti.
AIP Conference Proceedings. ed. / Ajay Kumar Mishra; Mohit Tyagi; D. V. Udupa; Sanjeeb Kumar Rout. 1. ed. American Institute of Physics Inc., 2024. 020196 (AIP Conference Proceedings; Vol. 2995, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - In the view of design and development of CdTe solar cell alternative buffer layer, here we conducted comparative numerical simulation study on ReS2 and CdS buffer layers. Our results suggest that lattice matching ReS2 buffer layer with CdTe absorber layer show improved cell parameter as compared to CdS buffer layer. The best cell structure composed of ITO/ReS2/CdTe layers shows JSC = 27mA/cm2, VOC = 0.887V and QE = 17.5% at higher absorber layer thickness of 3000nm.

AB - In the view of design and development of CdTe solar cell alternative buffer layer, here we conducted comparative numerical simulation study on ReS2 and CdS buffer layers. Our results suggest that lattice matching ReS2 buffer layer with CdTe absorber layer show improved cell parameter as compared to CdS buffer layer. The best cell structure composed of ITO/ReS2/CdTe layers shows JSC = 27mA/cm2, VOC = 0.887V and QE = 17.5% at higher absorber layer thickness of 3000nm.

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