Comparative studies of EFG poly-Si grown by different procedures

B. Pivac, V. Borjanovi, I. Kovacevi, B. N. Evtody, E. A. Katz

    Research output: Contribution to journalArticlepeer-review

    17 Scopus citations

    Abstract

    The impurity content in EFG polycrystalline silicon materials grown by different procedures from graphite and quartz crucible has been extensively studied using Fourier transform IR technique. It is shown that the oxygen content in the material is much more dependent on the growth atmosphere at meniscus than on the type of crucible. In all samples the carbon content remains supersaturated up to very high temperatures of annealing, not affected by the oxygen presence.

    Original languageEnglish
    Pages (from-to)165-171
    Number of pages7
    JournalSolar Energy Materials and Solar Cells
    Volume72
    Issue number1-4
    DOIs
    StatePublished - 1 Apr 2002

    Keywords

    • Carbon
    • Deep levels
    • Defects
    • Edge-defined film-fed growth
    • Oxygen
    • Polycrystalline silicon

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Renewable Energy, Sustainability and the Environment
    • Surfaces, Coatings and Films

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