The impurity content in EFG polycrystalline silicon materials grown by different procedures from graphite and quartz crucible has been extensively studied using Fourier transform IR technique. It is shown that the oxygen content in the material is much more dependent on the growth atmosphere at meniscus than on the type of crucible. In all samples the carbon content remains supersaturated up to very high temperatures of annealing, not affected by the oxygen presence.
- Deep levels
- Edge-defined film-fed growth
- Polycrystalline silicon
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films