Comparative studies of EFG poly-Si grown by different procedures

B. Pivac; V. Borjanovi; I. Kovacevi; B. N. Evtody; E. A. Katz

doi:10.1016/S0927-0248(01)00161-1

Comparative studies of EFG poly-Si grown by different procedures

B. Pivac, V. Borjanovi, I. Kovacevi, B. N. Evtody, E. A. Katz

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

The impurity content in EFG polycrystalline silicon materials grown by different procedures from graphite and quartz crucible has been extensively studied using Fourier transform IR technique. It is shown that the oxygen content in the material is much more dependent on the growth atmosphere at meniscus than on the type of crucible. In all samples the carbon content remains supersaturated up to very high temperatures of annealing, not affected by the oxygen presence.

Original language	English
Pages (from-to)	165-171
Number of pages	7
Journal	Solar Energy Materials and Solar Cells
Volume	72
Issue number	1-4
DOIs	https://doi.org/10.1016/S0927-0248(01)00161-1
State	Published - 1 Apr 2002

Keywords

Carbon
Deep levels
Defects
Edge-defined film-fed growth
Oxygen
Polycrystalline silicon

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

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10.1016/S0927-0248(01)00161-1

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abstract = "The impurity content in EFG polycrystalline silicon materials grown by different procedures from graphite and quartz crucible has been extensively studied using Fourier transform IR technique. It is shown that the oxygen content in the material is much more dependent on the growth atmosphere at meniscus than on the type of crucible. In all samples the carbon content remains supersaturated up to very high temperatures of annealing, not affected by the oxygen presence.",

keywords = "Carbon, Deep levels, Defects, Edge-defined film-fed growth, Oxygen, Polycrystalline silicon",

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AU - Borjanovi, V.

AU - Kovacevi, I.

AU - Evtody, B. N.

AU - Katz, E. A.

PY - 2002/4/1

Y1 - 2002/4/1

N2 - The impurity content in EFG polycrystalline silicon materials grown by different procedures from graphite and quartz crucible has been extensively studied using Fourier transform IR technique. It is shown that the oxygen content in the material is much more dependent on the growth atmosphere at meniscus than on the type of crucible. In all samples the carbon content remains supersaturated up to very high temperatures of annealing, not affected by the oxygen presence.

AB - The impurity content in EFG polycrystalline silicon materials grown by different procedures from graphite and quartz crucible has been extensively studied using Fourier transform IR technique. It is shown that the oxygen content in the material is much more dependent on the growth atmosphere at meniscus than on the type of crucible. In all samples the carbon content remains supersaturated up to very high temperatures of annealing, not affected by the oxygen presence.

KW - Carbon

KW - Deep levels

KW - Defects

KW - Edge-defined film-fed growth

KW - Oxygen

KW - Polycrystalline silicon

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JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

IS - 1-4

ER -

Comparative studies of EFG poly-Si grown by different procedures

Abstract

Keywords

ASJC Scopus subject areas

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