Comparison of strain in glow discharge a-Si:F and a-Si:H

R. Weil; I. Abdulhalim; R. Beserman; M. Janai; B. Pratt

doi:10.1016/0022-3093(85)90653-2

Comparison of strain in glow discharge a-Si:F and a-Si:H

R. Weil, I. Abdulhalim, R. Beserman, M. Janai, B. Pratt

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Abstract

Raman scattering experiments were performed on a-Si:H and a-Si:F samples which had the same electron spin density and dark conductivity. It was found that the a-Si:F had a wider Raman spectrum than a-Si:H. This implies that there is a narrower bond angle distribution in the a-Si:H sample. This is consistent with the hypothesis that in addition to satisfying dangling bonds in a-Si, H also relieves strain in the sample. This proposition was reinforced by the widening of the Raman spectra of a-Si:H samples taken after H evolution.

Original language	English
Pages (from-to)	261-264
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	77-78
Issue number	PART 1
DOIs	https://doi.org/10.1016/0022-3093(85)90653-2
State	Published - 2 Dec 1985
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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title = "Comparison of strain in glow discharge a-Si:F and a-Si:H",

abstract = "Raman scattering experiments were performed on a-Si:H and a-Si:F samples which had the same electron spin density and dark conductivity. It was found that the a-Si:F had a wider Raman spectrum than a-Si:H. This implies that there is a narrower bond angle distribution in the a-Si:H sample. This is consistent with the hypothesis that in addition to satisfying dangling bonds in a-Si, H also relieves strain in the sample. This proposition was reinforced by the widening of the Raman spectra of a-Si:H samples taken after H evolution.",

author = "R. Weil and I. Abdulhalim and R. Beserman and M. Janai and B. Pratt",

note = "Funding Information: *Research supported in part by the Israel National Council for Research and Development and the KFA Julich, Germany. The Fund for Promotion of Research at the Technion, and the Center for Absorption of Scientists of the Israel Immigration Ministry.",

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T1 - Comparison of strain in glow discharge a-Si:F and a-Si:H

AU - Weil, R.

AU - Abdulhalim, I.

AU - Beserman, R.

AU - Janai, M.

AU - Pratt, B.

N1 - Funding Information: *Research supported in part by the Israel National Council for Research and Development and the KFA Julich, Germany. The Fund for Promotion of Research at the Technion, and the Center for Absorption of Scientists of the Israel Immigration Ministry.

PY - 1985/12/2

Y1 - 1985/12/2

N2 - Raman scattering experiments were performed on a-Si:H and a-Si:F samples which had the same electron spin density and dark conductivity. It was found that the a-Si:F had a wider Raman spectrum than a-Si:H. This implies that there is a narrower bond angle distribution in the a-Si:H sample. This is consistent with the hypothesis that in addition to satisfying dangling bonds in a-Si, H also relieves strain in the sample. This proposition was reinforced by the widening of the Raman spectra of a-Si:H samples taken after H evolution.

AB - Raman scattering experiments were performed on a-Si:H and a-Si:F samples which had the same electron spin density and dark conductivity. It was found that the a-Si:F had a wider Raman spectrum than a-Si:H. This implies that there is a narrower bond angle distribution in the a-Si:H sample. This is consistent with the hypothesis that in addition to satisfying dangling bonds in a-Si, H also relieves strain in the sample. This proposition was reinforced by the widening of the Raman spectra of a-Si:H samples taken after H evolution.

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JF - Journal of Non-Crystalline Solids

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Comparison of strain in glow discharge a-Si:F and a-Si:H

Abstract

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