Comparison of strain in glow discharge a-Si:F and a-Si:H

R. Weil; I. Abdulhalim; R. Beserman; M. Janai; B. Pratt

doi:10.1016/0022-3093(85)90653-2

Comparison of strain in glow discharge a-Si:F and a-Si:H

R. Weil
, I. Abdulhalim
, R. Beserman
, M. Janai
, B. Pratt

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Raman scattering experiments were performed on a-Si:H and a-Si:F samples which had the same electron spin density and dark conductivity. It was found that the a-Si:F had a wider Raman spectrum than a-Si:H. This implies that there is a narrower bond angle distribution in the a-Si:H sample. This is consistent with the hypothesis that in addition to satisfying dangling bonds in a-Si, H also relieves strain in the sample. This proposition was reinforced by the widening of the Raman spectra of a-Si:H samples taken after H evolution.

Original language	English
Pages (from-to)	261-264
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	77-78
Issue number	PART 1
DOIs	https://doi.org/10.1016/0022-3093(85)90653-2
State	Published - 2 Dec 1985
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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10.1016/0022-3093(85)90653-2

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title = "Comparison of strain in glow discharge a-Si:F and a-Si:H",

abstract = "Raman scattering experiments were performed on a-Si:H and a-Si:F samples which had the same electron spin density and dark conductivity. It was found that the a-Si:F had a wider Raman spectrum than a-Si:H. This implies that there is a narrower bond angle distribution in the a-Si:H sample. This is consistent with the hypothesis that in addition to satisfying dangling bonds in a-Si, H also relieves strain in the sample. This proposition was reinforced by the widening of the Raman spectra of a-Si:H samples taken after H evolution.",

author = "R. Weil and I. Abdulhalim and R. Beserman and M. Janai and B. Pratt",

year = "1985",

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T1 - Comparison of strain in glow discharge a-Si:F and a-Si:H

AU - Weil, R.

AU - Abdulhalim, I.

AU - Beserman, R.

AU - Janai, M.

AU - Pratt, B.

PY - 1985/12/2

Y1 - 1985/12/2

N2 - Raman scattering experiments were performed on a-Si:H and a-Si:F samples which had the same electron spin density and dark conductivity. It was found that the a-Si:F had a wider Raman spectrum than a-Si:H. This implies that there is a narrower bond angle distribution in the a-Si:H sample. This is consistent with the hypothesis that in addition to satisfying dangling bonds in a-Si, H also relieves strain in the sample. This proposition was reinforced by the widening of the Raman spectra of a-Si:H samples taken after H evolution.

AB - Raman scattering experiments were performed on a-Si:H and a-Si:F samples which had the same electron spin density and dark conductivity. It was found that the a-Si:F had a wider Raman spectrum than a-Si:H. This implies that there is a narrower bond angle distribution in the a-Si:H sample. This is consistent with the hypothesis that in addition to satisfying dangling bonds in a-Si, H also relieves strain in the sample. This proposition was reinforced by the widening of the Raman spectra of a-Si:H samples taken after H evolution.

UR - https://www.scopus.com/pages/publications/0022218409

U2 - 10.1016/0022-3093(85)90653-2

DO - 10.1016/0022-3093(85)90653-2

M3 - Article

AN - SCOPUS:0022218409

SN - 0022-3093

VL - 77-78

SP - 261

EP - 264

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - PART 1

ER -

Comparison of strain in glow discharge a-Si:F and a-Si:H

Abstract

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