The contact properties of ZrNx on p-type Si obtained by magnetron reactive sputtering were investigated. Schottky diode characteristics were observed as determined by forward current-voltage (I-V) and capacitance-voltage (C-V) measurements. The zero-bias barrier heights evaluated by I-V were in the range of 0.55-0.63 V, which is higher than the value of 0.53 V of as-deposited amorphous TiN.
- Schottky barrier
- ZrN/p-type Si(1 0 0)