Contact characterizations of ZrN thin films obtained by reactive sputtering

J. Pelleg, A. Bibi, M. Sinder

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


The contact properties of ZrNx on p-type Si obtained by magnetron reactive sputtering were investigated. Schottky diode characteristics were observed as determined by forward current-voltage (I-V) and capacitance-voltage (C-V) measurements. The zero-bias barrier heights evaluated by I-V were in the range of 0.55-0.63 V, which is higher than the value of 0.53 V of as-deposited amorphous TiN.

Original languageEnglish
Pages (from-to)292-297
Number of pages6
JournalPhysica B: Condensed Matter
Issue number1-2
StatePublished - 30 Apr 2007


  • Schottky barrier
  • ZrN/p-type Si(1 0 0)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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