Contact characterizations of ZrN thin films obtained by reactive sputtering

J. Pelleg; A. Bibi; M. Sinder

doi:10.1016/j.physb.2007.01.024

Contact characterizations of ZrN thin films obtained by reactive sputtering

J. Pelleg
, A. Bibi
, M. Sinder

Department of Materials Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The contact properties of ZrN_x on p-type Si obtained by magnetron reactive sputtering were investigated. Schottky diode characteristics were observed as determined by forward current-voltage (I-V) and capacitance-voltage (C-V) measurements. The zero-bias barrier heights evaluated by I-V were in the range of 0.55-0.63 V, which is higher than the value of 0.53 V of as-deposited amorphous TiN.

Original language	English
Pages (from-to)	292-297
Number of pages	6
Journal	Physica B: Condensed Matter
Volume	393
Issue number	1-2
DOIs	https://doi.org/10.1016/j.physb.2007.01.024
State	Published - 30 Apr 2007

Keywords

Schottky barrier
ZrN/p-type Si(1 0 0)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.physb.2007.01.024

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title = "Contact characterizations of ZrN thin films obtained by reactive sputtering",

abstract = "The contact properties of ZrNx on p-type Si obtained by magnetron reactive sputtering were investigated. Schottky diode characteristics were observed as determined by forward current-voltage (I-V) and capacitance-voltage (C-V) measurements. The zero-bias barrier heights evaluated by I-V were in the range of 0.55-0.63 V, which is higher than the value of 0.53 V of as-deposited amorphous TiN.",

keywords = "Schottky barrier, ZrN/p-type Si(1 0 0)",

author = "J. Pelleg and A. Bibi and M. Sinder",

year = "2007",

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journal = "Physica B: Condensed Matter",

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T1 - Contact characterizations of ZrN thin films obtained by reactive sputtering

AU - Pelleg, J.

AU - Bibi, A.

AU - Sinder, M.

PY - 2007/4/30

Y1 - 2007/4/30

N2 - The contact properties of ZrNx on p-type Si obtained by magnetron reactive sputtering were investigated. Schottky diode characteristics were observed as determined by forward current-voltage (I-V) and capacitance-voltage (C-V) measurements. The zero-bias barrier heights evaluated by I-V were in the range of 0.55-0.63 V, which is higher than the value of 0.53 V of as-deposited amorphous TiN.

AB - The contact properties of ZrNx on p-type Si obtained by magnetron reactive sputtering were investigated. Schottky diode characteristics were observed as determined by forward current-voltage (I-V) and capacitance-voltage (C-V) measurements. The zero-bias barrier heights evaluated by I-V were in the range of 0.55-0.63 V, which is higher than the value of 0.53 V of as-deposited amorphous TiN.

KW - Schottky barrier

KW - ZrN/p-type Si(1 0 0)

UR - https://www.scopus.com/pages/publications/34047106914

U2 - 10.1016/j.physb.2007.01.024

DO - 10.1016/j.physb.2007.01.024

M3 - Article

AN - SCOPUS:34047106914

SN - 0921-4526

VL - 393

SP - 292

EP - 297

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1-2

ER -

Contact characterizations of ZrN thin films obtained by reactive sputtering

Abstract

Keywords

ASJC Scopus subject areas

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