TY - GEN
T1 - Contact characterizations of ZrN thin films obtained by reactive sputtering
AU - Pelleg, Joshua
AU - Bibi, Asaf
AU - Sinder, Michael
PY - 2008/12/1
Y1 - 2008/12/1
N2 - The contact properties of ZrN on p-type Si obtained by magnetron reactive sputtering were investigated. Schottky diodes characteristics were evaluated by current-voltage (I-V) and capacitance voltage (C-V) measurements. The barrier heights obtained by I-V and C-V are in the range of 0.55-0.63V and 0.88-0.91V, respectively. Due to the possible presence of interfacial layer and interface states which are located at the ZrN-semiconductor interface the I-V curves are not ideal. It is likely that n, the ideality factor is controlled by the interface state density. For each diode investigated in the ZrN/Si system, the barrier heights measured by the C-V method are considerably higher than those evaluated by I-V technique. At this stage we cannot present a theoretical explanation for the difference between the values of φBp beyond the speculations that the presence of interface states might be responsible for the difference. Since I-V measurements tend to emphasize the lower value of φBp while C-V measurements would give a value of φBp averaged over the entire interface the more probable magnitude of the barrier height can be assumed to be those measured by I-V technique.
AB - The contact properties of ZrN on p-type Si obtained by magnetron reactive sputtering were investigated. Schottky diodes characteristics were evaluated by current-voltage (I-V) and capacitance voltage (C-V) measurements. The barrier heights obtained by I-V and C-V are in the range of 0.55-0.63V and 0.88-0.91V, respectively. Due to the possible presence of interfacial layer and interface states which are located at the ZrN-semiconductor interface the I-V curves are not ideal. It is likely that n, the ideality factor is controlled by the interface state density. For each diode investigated in the ZrN/Si system, the barrier heights measured by the C-V method are considerably higher than those evaluated by I-V technique. At this stage we cannot present a theoretical explanation for the difference between the values of φBp beyond the speculations that the presence of interface states might be responsible for the difference. Since I-V measurements tend to emphasize the lower value of φBp while C-V measurements would give a value of φBp averaged over the entire interface the more probable magnitude of the barrier height can be assumed to be those measured by I-V technique.
UR - http://www.scopus.com/inward/record.url?scp=70350279091&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:70350279091
SN - 9781605608396
T3 - Materials Research Society Symposium Proceedings
SP - 98
EP - 102
BT - Nitrides and Related Bulk Materials
T2 - 2007 MRS Fall Meeting
Y2 - 26 November 2007 through 30 November 2007
ER -