Controlled growth of aluminum oxide thin films on hydrogen terminated Si(0 0 1) surface

S. Vizzini; H. Oughaddou; C. Léandri; V. K. Lazarov; A. Kohn; K. Nguyen; C. Coudreau; J. P. Bibérian; B. Ealet; J. L. Lazzari; F. Arnaud d'Avitaya; B. Aufray

doi:10.1016/j.jcrysgro.2007.03.037

Controlled growth of aluminum oxide thin films on hydrogen terminated Si(0 0 1) surface

S. Vizzini, H. Oughaddou, C. Léandri, V. K. Lazarov, A. Kohn, K. Nguyen, C. Coudreau, J. P. Bibérian, B. Ealet, J. L. Lazzari, F. Arnaud d'Avitaya, B. Aufray

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Auger electron spectroscopy, energy electron loss spectroscopy, atomic force microscopy and transmission electron microscopy were used to characterize ultra-thin aluminum oxide films grown on hydrogen-terminated Si(0 0 1)-H substrates via a specific atomic layer deposition and oxidation technique. Oxide thin films grown in such a way are highly stable with temperature at least up to 700 °C. Band gap was estimated to be 6.6±0.2 eV, independent of thickness. Formation of the oxide layer slightly increases the initial roughness of silicon surface. Furthermore, no silicon oxide was found at the aluminum oxide-silicon interface.

Original language	English
Pages (from-to)	26-29
Number of pages	4
Journal	Journal of Crystal Growth
Volume	305
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2007.03.037
State	Published - 1 Jul 2007
Externally published	Yes

Keywords

A1. AES
A1. AFM
A1. EELS
A1. HR-TEM
A1. Interfaces
A1. TEM
A2. Atomic layer deposition oxidation
A3. Molecular beam epitaxy
B1. Aluminum
B1. Oxides
B1. Silicon
B3. Heterojunctions semiconductor devices

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2007.03.037

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@article{06fb775aa65d45eeb99077d350494548,

title = "Controlled growth of aluminum oxide thin films on hydrogen terminated Si(0 0 1) surface",

abstract = "Auger electron spectroscopy, energy electron loss spectroscopy, atomic force microscopy and transmission electron microscopy were used to characterize ultra-thin aluminum oxide films grown on hydrogen-terminated Si(0 0 1)-H substrates via a specific atomic layer deposition and oxidation technique. Oxide thin films grown in such a way are highly stable with temperature at least up to 700 °C. Band gap was estimated to be 6.6±0.2 eV, independent of thickness. Formation of the oxide layer slightly increases the initial roughness of silicon surface. Furthermore, no silicon oxide was found at the aluminum oxide-silicon interface.",

keywords = "A1. AES, A1. AFM, A1. EELS, A1. HR-TEM, A1. Interfaces, A1. TEM, A2. Atomic layer deposition oxidation, A3. Molecular beam epitaxy, B1. Aluminum, B1. Oxides, B1. Silicon, B3. Heterojunctions semiconductor devices",

author = "S. Vizzini and H. Oughaddou and C. L{\'e}andri and Lazarov, {V. K.} and A. Kohn and K. Nguyen and C. Coudreau and Bib{\'e}rian, {J. P.} and B. Ealet and Lazzari, {J. L.} and {Arnaud d'Avitaya}, F. and B. Aufray",

note = "Funding Information: This work was supported by the European STREP-EMAC, contract number 017412.",

year = "2007",

month = jul,

day = "1",

doi = "10.1016/j.jcrysgro.2007.03.037",

language = "English",

volume = "305",

pages = "26--29",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - Controlled growth of aluminum oxide thin films on hydrogen terminated Si(0 0 1) surface

AU - Vizzini, S.

AU - Oughaddou, H.

AU - Léandri, C.

AU - Lazarov, V. K.

AU - Kohn, A.

AU - Nguyen, K.

AU - Coudreau, C.

AU - Bibérian, J. P.

AU - Ealet, B.

AU - Lazzari, J. L.

AU - Arnaud d'Avitaya, F.

AU - Aufray, B.

N1 - Funding Information: This work was supported by the European STREP-EMAC, contract number 017412.

PY - 2007/7/1

Y1 - 2007/7/1

N2 - Auger electron spectroscopy, energy electron loss spectroscopy, atomic force microscopy and transmission electron microscopy were used to characterize ultra-thin aluminum oxide films grown on hydrogen-terminated Si(0 0 1)-H substrates via a specific atomic layer deposition and oxidation technique. Oxide thin films grown in such a way are highly stable with temperature at least up to 700 °C. Band gap was estimated to be 6.6±0.2 eV, independent of thickness. Formation of the oxide layer slightly increases the initial roughness of silicon surface. Furthermore, no silicon oxide was found at the aluminum oxide-silicon interface.

AB - Auger electron spectroscopy, energy electron loss spectroscopy, atomic force microscopy and transmission electron microscopy were used to characterize ultra-thin aluminum oxide films grown on hydrogen-terminated Si(0 0 1)-H substrates via a specific atomic layer deposition and oxidation technique. Oxide thin films grown in such a way are highly stable with temperature at least up to 700 °C. Band gap was estimated to be 6.6±0.2 eV, independent of thickness. Formation of the oxide layer slightly increases the initial roughness of silicon surface. Furthermore, no silicon oxide was found at the aluminum oxide-silicon interface.

KW - A1. AES

KW - A1. AFM

KW - A1. EELS

KW - A1. HR-TEM

KW - A1. Interfaces

KW - A1. TEM

KW - A2. Atomic layer deposition oxidation

KW - A3. Molecular beam epitaxy

KW - B1. Aluminum

KW - B1. Oxides

KW - B1. Silicon

KW - B3. Heterojunctions semiconductor devices

UR - http://www.scopus.com/inward/record.url?scp=34249879238&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2007.03.037

DO - 10.1016/j.jcrysgro.2007.03.037

M3 - Article

AN - SCOPUS:34249879238

SN - 0022-0248

VL - 305

SP - 26

EP - 29

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

Controlled growth of aluminum oxide thin films on hydrogen terminated Si(0 0 1) surface

Abstract

Keywords

ASJC Scopus subject areas

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