High-resolution core-level photoemission spectroscopy was used to study the initial growth and interaction of In on Si(100). The In—Si bonding coordination number, determined by quantification of the number of Si surface atoms selectively modified in the presence of an In adatom, is 3 for very low In coverages, and decreases to 2 for (1/2) -monolayer coverage. The results are consistent with a structural model deduced from electron diffraction, Auger, and scanning electron microscopy studies.
ASJC Scopus subject areas
- General Physics and Astronomy