Copper grain boundary diffusion in electroless deposited cobalt based films and its influence on diffusion barrier integrity for copper metallization were investigated. The reduced diffusivity in the electroless deposited Co films resulted due to a reduction in the pre-exponential factor. Application of failure criterion to a 30 nm thick Co0.9P0.1 film was in good agreement with that of an electrical evaluation of MOS capacitors.
ASJC Scopus subject areas
- Physics and Astronomy (all)