Copper grain growth in thin film Cu-Cr multilayers

U. Admon, I. Dahan, M. P. Dariel, G. Kimmel, J. Sariel, A. Shtechman, B. Yahav, L. Zevin, D. S. Lashmore

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


Copper-chromium multilayers with a 25 nm repeat distance were prepared by dual gun sequential magnetron sputtering. The mutual immiscibility of the two elements ensures that no interdiffusion or reaction takes place at the deposition temperature. High temperature X-ray diffraction runs were carried out in the 370-630°C temperature range, at constant time intervals. At elevated temperature, the Cu(111) reflection showed increasing intensity and decreasing line-width as a function of time. Analysis of the line narrowing as a function of the annealing time and temperature allowed deduction of the activation energy, 0.41 ± 0.05 eV per atom, associated with the atom mobility involved in the copper grain growth.

Original languageEnglish
Pages (from-to)105-109
Number of pages5
JournalThin Solid Films
Issue number2
StatePublished - 1 Nov 1994


  • Grain boundary
  • Growth mechanism
  • Multilayers
  • X-ray diffraction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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