Correlating exciton localization with compositional fluctuations in InGaNGaN quantum wells grown on GaN planar surfaces and facets of GaN triangular prisms

S. Khatsevich; D. H. Rich; X. Zhang; P. D. Dapkus

doi:10.1063/1.2802291

Correlating exciton localization with compositional fluctuations in InGaNGaN quantum wells grown on GaN planar surfaces and facets of GaN triangular prisms

S. Khatsevich, D. H. Rich, X. Zhang, P. D. Dapkus

Department of Physics

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We have used spatially and temporally resolved cathodoluminescence (CL) to study the carrier recombination dynamics of InGaN quantum wells (QWs) grown on (0001)-oriented planar GaN and {1 1- 01} -oriented facets of GaN triangular prisms prepared by lateral epitaxial overgrowth in a metal-organic chemical vapor deposition system. The effects of In migration during growth on the resulting QW thickness and composition were examined. We employed a variable temperature time-resolved CL imaging approach that enables a spatial correlation between regions of enhanced exciton localization, luminescence efficiency, and radiative lifetime with the aim of distinguishing between excitons localized in In-rich quantum dots and those in the surrounding Ga-rich QW regions.

Original language	English
Article number	093502
Journal	Journal of Applied Physics
Volume	102
Issue number	9
DOIs	https://doi.org/10.1063/1.2802291
State	Published - 23 Nov 2007

ASJC Scopus subject areas

General Physics and Astronomy

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@article{326904dd54c14c18bd553e4de7a892bf,

title = "Correlating exciton localization with compositional fluctuations in InGaNGaN quantum wells grown on GaN planar surfaces and facets of GaN triangular prisms",

abstract = "We have used spatially and temporally resolved cathodoluminescence (CL) to study the carrier recombination dynamics of InGaN quantum wells (QWs) grown on (0001)-oriented planar GaN and {1 1- 01} -oriented facets of GaN triangular prisms prepared by lateral epitaxial overgrowth in a metal-organic chemical vapor deposition system. The effects of In migration during growth on the resulting QW thickness and composition were examined. We employed a variable temperature time-resolved CL imaging approach that enables a spatial correlation between regions of enhanced exciton localization, luminescence efficiency, and radiative lifetime with the aim of distinguishing between excitons localized in In-rich quantum dots and those in the surrounding Ga-rich QW regions.",

author = "S. Khatsevich and Rich, {D. H.} and X. Zhang and Dapkus, {P. D.}",

note = "Funding Information: This work was supported in part by the Israel Science Foundation (ISF Grant No. 8/02-1), NSF, ARO, ONR, and DARPA through the National Center for Integrated Photonic Technology (NCIPT).",

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doi = "10.1063/1.2802291",

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T1 - Correlating exciton localization with compositional fluctuations in InGaNGaN quantum wells grown on GaN planar surfaces and facets of GaN triangular prisms

AU - Khatsevich, S.

AU - Rich, D. H.

AU - Zhang, X.

AU - Dapkus, P. D.

N1 - Funding Information: This work was supported in part by the Israel Science Foundation (ISF Grant No. 8/02-1), NSF, ARO, ONR, and DARPA through the National Center for Integrated Photonic Technology (NCIPT).

PY - 2007/11/23

Y1 - 2007/11/23

N2 - We have used spatially and temporally resolved cathodoluminescence (CL) to study the carrier recombination dynamics of InGaN quantum wells (QWs) grown on (0001)-oriented planar GaN and {1 1- 01} -oriented facets of GaN triangular prisms prepared by lateral epitaxial overgrowth in a metal-organic chemical vapor deposition system. The effects of In migration during growth on the resulting QW thickness and composition were examined. We employed a variable temperature time-resolved CL imaging approach that enables a spatial correlation between regions of enhanced exciton localization, luminescence efficiency, and radiative lifetime with the aim of distinguishing between excitons localized in In-rich quantum dots and those in the surrounding Ga-rich QW regions.

AB - We have used spatially and temporally resolved cathodoluminescence (CL) to study the carrier recombination dynamics of InGaN quantum wells (QWs) grown on (0001)-oriented planar GaN and {1 1- 01} -oriented facets of GaN triangular prisms prepared by lateral epitaxial overgrowth in a metal-organic chemical vapor deposition system. The effects of In migration during growth on the resulting QW thickness and composition were examined. We employed a variable temperature time-resolved CL imaging approach that enables a spatial correlation between regions of enhanced exciton localization, luminescence efficiency, and radiative lifetime with the aim of distinguishing between excitons localized in In-rich quantum dots and those in the surrounding Ga-rich QW regions.

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Correlating exciton localization with compositional fluctuations in InGaNGaN quantum wells grown on GaN planar surfaces and facets of GaN triangular prisms

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