Crystal-melt interface near grain boundaries during growth of shaped silicon crystals

E. A. Katz, L. E. Polyak

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Experimental data and a theoretical model dealing with the morphology of the crystal-melt interface near grain boundaries of different types during silicon crystal growth by the edge-defined film-fed growth method are presented. The relationship between the morphology of the crystal-melt interface and the boundary crystallographic parameters (the grain misorientation, the boundary plane orientation, the crystallographic direction of growth for adjacent grains) is established.

Original languageEnglish
Pages (from-to)115-119
Number of pages5
JournalJournal of Crystal Growth
Volume172
Issue number1-2
DOIs
StatePublished - 1 Jan 1997

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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