Crystal-melt interface near grain boundaries during growth of shaped silicon crystals

E. A. Katz; L. E. Polyak

doi:10.1016/S0022-0248(96)00730-0

Crystal-melt interface near grain boundaries during growth of shaped silicon crystals

E. A. Katz
, L. E. Polyak

The Swiss Institute for Dryland Environmental and Energy Research

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Experimental data and a theoretical model dealing with the morphology of the crystal-melt interface near grain boundaries of different types during silicon crystal growth by the edge-defined film-fed growth method are presented. The relationship between the morphology of the crystal-melt interface and the boundary crystallographic parameters (the grain misorientation, the boundary plane orientation, the crystallographic direction of growth for adjacent grains) is established.

Original language	English
Pages (from-to)	115-119
Number of pages	5
Journal	Journal of Crystal Growth
Volume	172
Issue number	1-2
DOIs	https://doi.org/10.1016/S0022-0248(96)00730-0
State	Published - 1 Jan 1997

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(96)00730-0

Cite this

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title = "Crystal-melt interface near grain boundaries during growth of shaped silicon crystals",

abstract = "Experimental data and a theoretical model dealing with the morphology of the crystal-melt interface near grain boundaries of different types during silicon crystal growth by the edge-defined film-fed growth method are presented. The relationship between the morphology of the crystal-melt interface and the boundary crystallographic parameters (the grain misorientation, the boundary plane orientation, the crystallographic direction of growth for adjacent grains) is established.",

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doi = "10.1016/S0022-0248(96)00730-0",

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AU - Katz, E. A.

AU - Polyak, L. E.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - Experimental data and a theoretical model dealing with the morphology of the crystal-melt interface near grain boundaries of different types during silicon crystal growth by the edge-defined film-fed growth method are presented. The relationship between the morphology of the crystal-melt interface and the boundary crystallographic parameters (the grain misorientation, the boundary plane orientation, the crystallographic direction of growth for adjacent grains) is established.

AB - Experimental data and a theoretical model dealing with the morphology of the crystal-melt interface near grain boundaries of different types during silicon crystal growth by the edge-defined film-fed growth method are presented. The relationship between the morphology of the crystal-melt interface and the boundary crystallographic parameters (the grain misorientation, the boundary plane orientation, the crystallographic direction of growth for adjacent grains) is established.

UR - https://www.scopus.com/pages/publications/0031546785

U2 - 10.1016/S0022-0248(96)00730-0

DO - 10.1016/S0022-0248(96)00730-0

M3 - Article

AN - SCOPUS:0031546785

SN - 0022-0248

VL - 172

SP - 115

EP - 119

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-2

ER -

Crystal-melt interface near grain boundaries during growth of shaped silicon crystals

Abstract

ASJC Scopus subject areas

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