TY - JOUR
T1 - Crystallization of layered metal-dichalcogenides films on amorphous substrates
AU - Galun, E.
AU - Cohen, H.
AU - Margulis, L.
AU - Vilan, A.
AU - Tsirlina, T.
AU - Hodes, G.
AU - Tenne, R.
AU - Hershfinkel, M.
AU - Jaegermann, W.
AU - Ellmer, K.
PY - 1995/12/1
Y1 - 1995/12/1
N2 - Anisotropic materials with layered structure, like MoS2 and WSe2, play an important role in a number of technologies. Some of these applications (lubrication, photovoltaics) require polycrystalline films oriented with their c axis perpendicular to the substrate surface (type-II texture), which is the thermodynamically favorable texture. However, films with the substrate ∥c (type-I texture) are usually obtained. We report that an ultrathin (<10 nm) metal-chalcogenide interlayer eutectics, like Ni 3Se2,SnSe2,orInSe disentangle the growth mode of the film from the underlying amorphous substrate, and hence, WSe2 films with a perfect type-II texture and crystallites at least a few mm 2 large are obtained at temperatures as low as 700°C (van der Waals rheotaxy-vdWR). The mechanism for this growth mode is proposed.
AB - Anisotropic materials with layered structure, like MoS2 and WSe2, play an important role in a number of technologies. Some of these applications (lubrication, photovoltaics) require polycrystalline films oriented with their c axis perpendicular to the substrate surface (type-II texture), which is the thermodynamically favorable texture. However, films with the substrate ∥c (type-I texture) are usually obtained. We report that an ultrathin (<10 nm) metal-chalcogenide interlayer eutectics, like Ni 3Se2,SnSe2,orInSe disentangle the growth mode of the film from the underlying amorphous substrate, and hence, WSe2 films with a perfect type-II texture and crystallites at least a few mm 2 large are obtained at temperatures as low as 700°C (van der Waals rheotaxy-vdWR). The mechanism for this growth mode is proposed.
UR - http://www.scopus.com/inward/record.url?scp=0000119969&partnerID=8YFLogxK
U2 - 10.1063/1.115251
DO - 10.1063/1.115251
M3 - Article
AN - SCOPUS:0000119969
SN - 0003-6951
VL - 67
SP - 3474
JO - Applied Physics Letters
JF - Applied Physics Letters
ER -
