Crystallization of layered metal-dichalcogenides films on amorphous substrates

E. Galun, H. Cohen, L. Margulis, A. Vilan, T. Tsirlina, G. Hodes, R. Tenne, M. Hershfinkel, W. Jaegermann, K. Ellmer

Research output: Contribution to journalArticlepeer-review

26 Scopus citations


Anisotropic materials with layered structure, like MoS2 and WSe2, play an important role in a number of technologies. Some of these applications (lubrication, photovoltaics) require polycrystalline films oriented with their c axis perpendicular to the substrate surface (type-II texture), which is the thermodynamically favorable texture. However, films with the substrate ∥c (type-I texture) are usually obtained. We report that an ultrathin (<10 nm) metal-chalcogenide interlayer eutectics, like Ni 3Se2,SnSe2,orInSe disentangle the growth mode of the film from the underlying amorphous substrate, and hence, WSe2 films with a perfect type-II texture and crystallites at least a few mm 2 large are obtained at temperatures as low as 700°C (van der Waals rheotaxy-vdWR). The mechanism for this growth mode is proposed.

Original languageEnglish
Pages (from-to)3474
JournalApplied Physics Letters
StatePublished - 1 Dec 1995

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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