CsIBr2 at high pressures: An insitu Raman and ADXRD investigation

Nishant N. Patel, Meenakshi Sunder

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We report the results of ambient temperature high pressure Raman and synchrotron based ADXRD study of CsIBr2 up to 32 and 25 ​GPa respectively. Raman spectroscopic measurements indicate two phase transitions above 5 and 19 ​GPa respectively. High pressure ADXRD measurements reveal that the ambient orthorhombic (SG:Pnma) phase of CsIBr2 is stable up to a pressure of 5 ​GPa above which a phase transition to a trigonal (SG:P-3c1) phase, coexisting with the ambient phase, is observed. The stability region of the trigonal phase has been found to be up to 19.4 ​GPa above which another phase transition is observed. A third order and second order Birch-Murnaghan equation of state fit to pressure dependence of unit cell volume yielded a bulk modulus of 10.9(8) GPa and 17.8(1) GPa for the orthorhombic and trigonal phase respectively.

Original languageEnglish
Article number122530
JournalJournal of Solid State Chemistry
Volume303
DOIs
StatePublished - 1 Nov 2021
Externally publishedYes

Keywords

  • Diamond anvil cell
  • High pressure
  • Polyhalide
  • Raman spectroscopy
  • X-ray diffraction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Physical and Theoretical Chemistry
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'CsIBr2 at high pressures: An insitu Raman and ADXRD investigation'. Together they form a unique fingerprint.

Cite this