Current-induced metastable resistive states with memory in low-doped manganites

Y. Yuzhelevski, V. Markovich, V. Dikovsky, E. Rozenberg, G. Gorodetsky, G. Jung, D. A. Shulyatev, Y. Mukovskii

Research output: Contribution to journalArticlepeer-review

114 Scopus citations

Abstract

The influence of dc current flow on the resistivity and phase transitions in low-doped La0.82Ca0.18MnO3 single crystals has been investigated. At low temperatures, where the resistivity strongly increases with decreasing temperature, dc current depresses resistivity in a way consistent with the domination of tunneling-conduction mechanisms. Current flow exceeding some threshold currents results in resistivity switching and metastability. Bipolar current sweep exceeding threshold currents in both positive and negative direction creates low-resistivity states in the sample. The low-resistivity state converts into a very-low- and stable-resistivity state under a stronger bipolar current sweep. Current-induced low-resistivity states are characterized by long-term memory persisting even after storing the sample for a few days at room temperature. The memory can be erased by ac current flow at high temperatures. The results are interpreted in terms of a spin-polarized tunnel conduction mechanism, which modifies phase-separation conditions along the percolation path.

Original languageEnglish
Article number224428
Pages (from-to)2244281-22442810
Number of pages20198530
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume64
Issue number22
DOIs
StatePublished - 1 Dec 2001

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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